ZrO2 Ferroelectric FET for Non-volatile Memory Application

We demonstrate for the first time ZrO 2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO 2 /Ge capacitor is entirely free of wake-up effect and has significantly impr...

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Bibliographic Details
Published in:IEEE electron device letters 2019-09, Vol.40 (9), p.1419-1422
Main Authors: Liu, Huan, Wang, Chengxu, Han, Genquan, Li, Jing, Peng, Yue, Liu, Yan, Wang, Xingsheng, Zhong, Ni, Duan, Chungang, Wang, Xinran, Xu, Nuo, Liu, Tsu-Jae King, Hao, Yue
Format: Article
Language:English
Subjects:
Anti-ferroelectric
Capacitors
Electrical measurement
Fatigue
ferroelectric
ferroelectric field-effect transistor (FeFET)
Ferroelectric materials
Ferroelectricity
Field effect transistors
Germanium
Iron
Logic gates
Nonvolatile memory
Polarization
Semiconductor devices
Voltage measurement
Zirconium dioxide
ZrO
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Summary:We demonstrate for the first time ZrO 2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO 2 /Ge capacitor is entirely free of wake-up effect and has significantly improved fatigue characteristics compared to a HfZrO x control device. Thanks to relatively small remnant polarization and a high-quality ZrO 2 /Ge interface, up to 10 7 cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 °C are achieved.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2930458