Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam

A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self...

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Bibliographic Details
Published in:arXiv.org 2019-08
Main Authors: Matsumoto, Ryo, Adachi, Shintaro, El Hadi S Sadki, Yamamoto, Sayaka, Tanaka, Hiromi, Takeya, Hiroyuki, Takano, Yoshihiko
Format: Article
Language:English
Subjects:
Dosage
Gallium
Ion beams
Patterning
Silicon
Superconductivity
Online Access:Get full text
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Summary:A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.
ISSN:2331-8422
DOI:10.48550/arxiv.1908.09272