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Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell
The hole-blocking and electron- transporting layer is an important component of third-generation solar cells. This layer is responsible for both hindering the hole recombination from the hole-transport layer and collecting photo-generated electrons; that in turn impact photon-to-current conversion e...
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Published in: | Electrochimica acta 2019-09, Vol.318, p.405-412 |
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description | The hole-blocking and electron- transporting layer is an important component of third-generation solar cells. This layer is responsible for both hindering the hole recombination from the hole-transport layer and collecting photo-generated electrons; that in turn impact photon-to-current conversion efficiency (ɳ) of devices. Conventionally, WO3 is being used as hole-transport layer owing to high work function and carrier mobility; and excellent thermal stability. In this paper we report ultra-thin WO3 films, prepared by UVO-treatment of WO3-octadecylamine Langmuir-Blodgett multilayers, for use as blocking layers in dye sensitized solar cells (DSSCs). For the first time, it is observed that ɳ of DSSCs with optimized WO3 blocking layer improved significantly (21%) as compared to those based on conventional TiO2 blocking layers. The improvement in ɳ is the result of improved short-circuit current density which is obtained without any accompanying reduction in open-circuit potential and fill factor. This is attributable to the dense and uniform morphology, excellent hole-blocking properties, crystallinity and proper position of Fermi level. The analyses not only reveal that ɳ of DSSCs can be enhanced by employing ultra-thin WO3 LB films as blocking layers but also suggest that the films can possibly be extended further for perosvskite and polymer solar cells.
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doi_str_mv | 10.1016/j.electacta.2019.06.047 |
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[Display omitted]</description><identifier>ISSN: 0013-4686</identifier><identifier>EISSN: 1873-3859</identifier><identifier>DOI: 10.1016/j.electacta.2019.06.047</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Carrier mobility ; Circuits ; Dye sensitized solar cells ; Dyes ; Hole blocking Layer ; Langmuir-Blodgett films ; Low temperature ; Low temperature crystalline WO3 ; Morphology ; Multilayers ; Performance enhancement ; Photovoltaic cells ; Short circuit currents ; Thermal stability ; Thin films ; Titanium dioxide ; Transport ; Tungsten oxides ; Work functions</subject><ispartof>Electrochimica acta, 2019-09, Vol.318, p.405-412</ispartof><rights>2019 Elsevier Ltd</rights><rights>Copyright Elsevier BV Sep 20, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-c0a736eab13bb31d64cf4e7c7c38c191ccea0c3f47071868550f2bab1957c8a3</citedby><cites>FETCH-LOGICAL-c343t-c0a736eab13bb31d64cf4e7c7c38c191ccea0c3f47071868550f2bab1957c8a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Prakash, Om</creatorcontrib><creatorcontrib>Saxena, Vibha</creatorcontrib><creatorcontrib>Choudhury, Sipra</creatorcontrib><creatorcontrib>Tanvi</creatorcontrib><creatorcontrib>Singh, Ajay</creatorcontrib><creatorcontrib>Debnath, A.K.</creatorcontrib><creatorcontrib>Mahajan, A.</creatorcontrib><creatorcontrib>Muthe, K.P.</creatorcontrib><creatorcontrib>Aswal, D.K.</creatorcontrib><title>Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell</title><title>Electrochimica acta</title><description>The hole-blocking and electron- transporting layer is an important component of third-generation solar cells. This layer is responsible for both hindering the hole recombination from the hole-transport layer and collecting photo-generated electrons; that in turn impact photon-to-current conversion efficiency (ɳ) of devices. Conventionally, WO3 is being used as hole-transport layer owing to high work function and carrier mobility; and excellent thermal stability. In this paper we report ultra-thin WO3 films, prepared by UVO-treatment of WO3-octadecylamine Langmuir-Blodgett multilayers, for use as blocking layers in dye sensitized solar cells (DSSCs). For the first time, it is observed that ɳ of DSSCs with optimized WO3 blocking layer improved significantly (21%) as compared to those based on conventional TiO2 blocking layers. The improvement in ɳ is the result of improved short-circuit current density which is obtained without any accompanying reduction in open-circuit potential and fill factor. This is attributable to the dense and uniform morphology, excellent hole-blocking properties, crystallinity and proper position of Fermi level. The analyses not only reveal that ɳ of DSSCs can be enhanced by employing ultra-thin WO3 LB films as blocking layers but also suggest that the films can possibly be extended further for perosvskite and polymer solar cells.
[Display omitted]</description><subject>Carrier mobility</subject><subject>Circuits</subject><subject>Dye sensitized solar cells</subject><subject>Dyes</subject><subject>Hole blocking Layer</subject><subject>Langmuir-Blodgett films</subject><subject>Low temperature</subject><subject>Low temperature crystalline WO3</subject><subject>Morphology</subject><subject>Multilayers</subject><subject>Performance enhancement</subject><subject>Photovoltaic cells</subject><subject>Short circuit currents</subject><subject>Thermal stability</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><subject>Transport</subject><subject>Tungsten oxides</subject><subject>Work functions</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFUc2K2zAQFqWFpts-QwU92x1ZjuQct0v_ILCXhT0KeTxOlMpWKslt0yfp41YmpdeFgWGY74eZj7G3AmoBQr0_1eQJsy1VNyB2NagaWv2MbUSnZSW77e452wAIWbWqUy_Zq5ROAKCVhg37sw8_eabpTNHmJRI_x4CUku098cXnaKt8dDN_vJd8b-fDtLhYffBhOFDOfHR-4jZx-oXkPc2ZH0Ph9T7gNzcfuLcXinwMkdN8tDPSwItRmad14EV3uBBPNCeX3e-yTcHbyFex1-zFaH2iN__6DXv49PHh7ku1v__89e52X6FsZa4QrJaKbC9k30sxqBbHljRqlB2KnUAkCyjHVoMWneq2WxibvsB3W42dlTfs3VW23P19oZTNKSxxLo6maTohWq3bpqD0FYUxpBRpNOfoJhsvRoBZUzAn8z8Fs6ZgQJmSQmHeXplUbvjhKJqEjtZPuFjwZgjuSY2_2vOYdg</recordid><startdate>20190920</startdate><enddate>20190920</enddate><creator>Prakash, Om</creator><creator>Saxena, Vibha</creator><creator>Choudhury, Sipra</creator><creator>Tanvi</creator><creator>Singh, Ajay</creator><creator>Debnath, A.K.</creator><creator>Mahajan, A.</creator><creator>Muthe, K.P.</creator><creator>Aswal, D.K.</creator><general>Elsevier Ltd</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20190920</creationdate><title>Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell</title><author>Prakash, Om ; Saxena, Vibha ; Choudhury, Sipra ; Tanvi ; Singh, Ajay ; Debnath, A.K. ; Mahajan, A. ; Muthe, K.P. ; Aswal, D.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-c0a736eab13bb31d64cf4e7c7c38c191ccea0c3f47071868550f2bab1957c8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Carrier mobility</topic><topic>Circuits</topic><topic>Dye sensitized solar cells</topic><topic>Dyes</topic><topic>Hole blocking Layer</topic><topic>Langmuir-Blodgett films</topic><topic>Low temperature</topic><topic>Low temperature crystalline WO3</topic><topic>Morphology</topic><topic>Multilayers</topic><topic>Performance enhancement</topic><topic>Photovoltaic cells</topic><topic>Short circuit currents</topic><topic>Thermal stability</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><topic>Transport</topic><topic>Tungsten oxides</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Prakash, Om</creatorcontrib><creatorcontrib>Saxena, Vibha</creatorcontrib><creatorcontrib>Choudhury, Sipra</creatorcontrib><creatorcontrib>Tanvi</creatorcontrib><creatorcontrib>Singh, Ajay</creatorcontrib><creatorcontrib>Debnath, A.K.</creatorcontrib><creatorcontrib>Mahajan, A.</creatorcontrib><creatorcontrib>Muthe, K.P.</creatorcontrib><creatorcontrib>Aswal, D.K.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Prakash, Om</au><au>Saxena, Vibha</au><au>Choudhury, Sipra</au><au>Tanvi</au><au>Singh, Ajay</au><au>Debnath, A.K.</au><au>Mahajan, A.</au><au>Muthe, K.P.</au><au>Aswal, D.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell</atitle><jtitle>Electrochimica acta</jtitle><date>2019-09-20</date><risdate>2019</risdate><volume>318</volume><spage>405</spage><epage>412</epage><pages>405-412</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><abstract>The hole-blocking and electron- transporting layer is an important component of third-generation solar cells. This layer is responsible for both hindering the hole recombination from the hole-transport layer and collecting photo-generated electrons; that in turn impact photon-to-current conversion efficiency (ɳ) of devices. Conventionally, WO3 is being used as hole-transport layer owing to high work function and carrier mobility; and excellent thermal stability. In this paper we report ultra-thin WO3 films, prepared by UVO-treatment of WO3-octadecylamine Langmuir-Blodgett multilayers, for use as blocking layers in dye sensitized solar cells (DSSCs). For the first time, it is observed that ɳ of DSSCs with optimized WO3 blocking layer improved significantly (21%) as compared to those based on conventional TiO2 blocking layers. The improvement in ɳ is the result of improved short-circuit current density which is obtained without any accompanying reduction in open-circuit potential and fill factor. This is attributable to the dense and uniform morphology, excellent hole-blocking properties, crystallinity and proper position of Fermi level. The analyses not only reveal that ɳ of DSSCs can be enhanced by employing ultra-thin WO3 LB films as blocking layers but also suggest that the films can possibly be extended further for perosvskite and polymer solar cells.
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subjects | Carrier mobility Circuits Dye sensitized solar cells Dyes Hole blocking Layer Langmuir-Blodgett films Low temperature Low temperature crystalline WO3 Morphology Multilayers Performance enhancement Photovoltaic cells Short circuit currents Thermal stability Thin films Titanium dioxide Transport Tungsten oxides Work functions |
title | Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell |
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