A Contact Mechanics Formulation for Predicting Dishing and Erosion CMP Defects in Integrated Circuits

A three-dimensional contact mechanics formulation is presented for chemical mechanical polishing applications. The formulation is coupled with the Preston material removal equation in order to simulate the evolution of pressure and wafer height. The physics-based formulation allows the pressure and...

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Bibliographic Details
Published in:Tribology letters 2015-08, Vol.59 (2), p.1-12, Article 36
Main Authors: Sierra Suarez, J. A., Higgs, C. F.
Format: Article
Language:English
Subjects:
Bulging
Chemical-mechanical polishing
Chemistry and Materials Science
Computer simulation
Corrosion and Coatings
Erosion
Integrated circuits
Materials Science
Mechanics (physics)
Nanotechnology
Organic chemistry
Original Paper
Physical Chemistry
Scale models
Surfaces and Interfaces
Theoretical and Applied Mechanics
Thin Films
Tribology
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Summary:A three-dimensional contact mechanics formulation is presented for chemical mechanical polishing applications. The formulation is coupled with the Preston material removal equation in order to simulate the evolution of pressure and wafer height. The physics-based formulation allows the pressure and height to evolve such that dishing and erosion appear seamlessly. Results are compared against another feature-scale model and experiment. The methodology and model offer physics-based results that further the understanding of chemical mechanical polishing for a given layout.
ISSN:1023-8883
1573-2711
DOI:10.1007/s11249-015-0550-1