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A New Type of Charge-Density-Wave Pinning in Orthorhombic TaS3 Crystals with Quenching Defects
Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS 3 samples in the temperature range below the Peierls transition temperature T < T P is observed. It makes it possible to study the character of pinning of the charge density wave by these defects. A num...
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Published in: | JETP letters 2019-07, Vol.110 (1), p.62-67 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS
3
samples in the temperature range below the Peierls transition temperature
T
<
T
P
is observed. It makes it possible to study the character of pinning of the charge density wave by these defects. A number of fundamental differences from pinning by ordinary local pinning centers—impurities and point defects—have been found. We conclude that quenching defects are extended (non-local) objects (presumably, dislocations) that can diffuse from the crystal during low-temperature thermocycling due to their strong interaction with the charge density wave, which is intrinsic for Peierls conductors. The presence of these defects leads to a previously unknown non-local type of the charge-density-wave pinning that acts on
T
P
and the threshold field for the onset of charge-density-wave sliding,
E
T
, differently in comparison with the local pinning centers. |
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ISSN: | 0021-3640 1090-6487 |
DOI: | 10.1134/S0021364019130034 |