High‐Pressure Synthesis and Phase Stability of Nickel Pernitride

The high‐pressure nitridation of nickel was investigated using a laser‐heated diamond‐anvil cell. Marcasite‐type nickel pernitride (NiN2) was synthesized at approximately 40 GPa, and it transformed into the tetragonal phase at approximately 3 GPa along with the decompression. The structural refineme...

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Bibliographic Details
Published in:European journal of inorganic chemistry 2019-09, Vol.2019 (33), p.3753-3757
Main Authors: Niwa, Ken, Fukui, Riku, Terabe, Toshiki, Kawada, Takuya, Kato, Daiki, Sasaki, Takuya, Soda, Kazuo, Hasegawa, Masashi
Format: Article
Language:English
Subjects:
Bulk modulus
Diamonds
High‐pressure chemistry
Inorganic chemistry
Laser beam heating
Nickel
Pernitrides
Phase stability
Phase transitions
Transition metals
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Summary:The high‐pressure nitridation of nickel was investigated using a laser‐heated diamond‐anvil cell. Marcasite‐type nickel pernitride (NiN2) was synthesized at approximately 40 GPa, and it transformed into the tetragonal phase at approximately 3 GPa along with the decompression. The structural refinement of marcasite‐type NiN2 at 36 GPa gives an N‐N distance of 1.24 Å. The first‐principles calculation reveals that the marcasite‐type NiN2 is a narrow‐gap semiconductor, and high‐pressure in‐situ X‐ray diffraction measurements revealed a zero‐pressure bulk modulus of 172(6) GPa. The axial ratios (c/a and b/a) of marcasite‐type NiN2 are close to the upper‐limit values of marcasite‐type structures, which suggests that the stability of marcasite‐type transition metal pernitrides strongly depends on the d‐electrons. Marcasite‐type nickel pernitride (NiN2) was synthesized using a laser‐heated diamond‐anvil cell up at 40 GPa. The structural refinement of marcasite‐type NiN2 at 36 GPa yielded an N‐N distance of 1.24 Å. The marcasite‐type NiN2 is a narrow‐gap semiconductor and shows a zero‐pressure bulk modulus of 172(6) GPa.
ISSN:1434-1948
1099-0682
DOI:10.1002/ejic.201900489