Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method

Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally...

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Published in:Journal of the Ceramic Society of Japan 2019/09/01, Vol.127(9), pp.612-616
Main Authors: SAKAMOTO, Naonori, SUZUKI, Takaya, KAWAGUCHI, Takahiko, WAKIYA, Naoki, SUZUKI, Hisao
Format: Article
Language:English
Subjects:
Aluminum
Aluminum nitride
Atmospheric pressure
Chemical vapor deposition
CVD
Electrical resistivity
Low energy cost process
Low temperature
Nucleation
Organic chemistry
Substrates
Thermal conductivity
Thin film
Thin films
Vacuum systems
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cited_by cdi_FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3
cites cdi_FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3
container_end_page 616
container_issue 9
container_start_page 612
container_title Journal of the Ceramic Society of Japan
container_volume 127
creator SAKAMOTO, Naonori
SUZUKI, Takaya
KAWAGUCHI, Takahiko
WAKIYA, Naoki
SUZUKI, Hisao
description Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally grown AlN film by atmospheric pressure halide CVD method, in which AlN films grow under air pressure without any requirement of vacuum systems. For obtaining uniaxial AlN films, seeding layer prepared at the initial stage of the growth plays an important role. Growth mechanisms and effects of the seeding layer is discussed based upon optical and miscrostructural analyses.
doi_str_mv 10.2109/jcersj2.19038
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2287047241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2287047241</sourcerecordid><originalsourceid>FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3</originalsourceid><addsrcrecordid>eNpF0E1r3DAQBmBTWmia9Ni7oGen-rAs-Vg2SVtYyCXkKsbyKJaxLVeSCZtfH-9uSC4awTwzMG9R_GD0mjPa_BosxjTwa9ZQoT8VF0xUuqylkJ-3v9a8pKoSX4tvKQ2U1rwS-qJ42YdnknFaMEJeIxKYO-IgZfIUw3PuSXAkzFh2PqLNPswwjodTbyYwrpOf14nMPkffIXF-nEh7IJCnkJYeo7dkiZjScXEP49HsHm_IhLkP3VXxxcGY8PtbvSwe7m4fdn_L_f2ff7vf-9JKpXLZYadZ3dbCCqt0JWXFZVtzZA2Aq1xDu7bplNJMMieAS5CtdI2GGjelUVwWP89rlxj-r5iyGcIatzuS4VwrWilesU2VZ2VjSCmiM0v0E8SDYdQc0zVv6ZpTupu_PfshZXjCdw0xezvih-bKNKf3NPfetz1Eg7N4BWZ-iZ0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2287047241</pqid></control><display><type>article</type><title>Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method</title><source>J-STAGE (Japan Science &amp; Technology Information Aggregator, Electronic) - Open Access English articles</source><creator>SAKAMOTO, Naonori ; SUZUKI, Takaya ; KAWAGUCHI, Takahiko ; WAKIYA, Naoki ; SUZUKI, Hisao</creator><creatorcontrib>SAKAMOTO, Naonori ; SUZUKI, Takaya ; KAWAGUCHI, Takahiko ; WAKIYA, Naoki ; SUZUKI, Hisao</creatorcontrib><description>Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally grown AlN film by atmospheric pressure halide CVD method, in which AlN films grow under air pressure without any requirement of vacuum systems. For obtaining uniaxial AlN films, seeding layer prepared at the initial stage of the growth plays an important role. Growth mechanisms and effects of the seeding layer is discussed based upon optical and miscrostructural analyses.</description><identifier>ISSN: 1882-0743</identifier><identifier>EISSN: 1348-6535</identifier><identifier>DOI: 10.2109/jcersj2.19038</identifier><language>eng</language><publisher>Tokyo: The Ceramic Society of Japan</publisher><subject>Aluminum ; Aluminum nitride ; Atmospheric pressure ; Chemical vapor deposition ; CVD ; Electrical resistivity ; Low energy cost process ; Low temperature ; Nucleation ; Organic chemistry ; Substrates ; Thermal conductivity ; Thin film ; Thin films ; Vacuum systems</subject><ispartof>Journal of the Ceramic Society of Japan, 2019/09/01, Vol.127(9), pp.612-616</ispartof><rights>2019 The Ceramic Society of Japan</rights><rights>Copyright Japan Science and Technology Agency 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3</citedby><cites>FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1880,27923,27924</link.rule.ids></links><search><creatorcontrib>SAKAMOTO, Naonori</creatorcontrib><creatorcontrib>SUZUKI, Takaya</creatorcontrib><creatorcontrib>KAWAGUCHI, Takahiko</creatorcontrib><creatorcontrib>WAKIYA, Naoki</creatorcontrib><creatorcontrib>SUZUKI, Hisao</creatorcontrib><title>Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method</title><title>Journal of the Ceramic Society of Japan</title><addtitle>J. Ceram. Soc. Japan</addtitle><description>Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally grown AlN film by atmospheric pressure halide CVD method, in which AlN films grow under air pressure without any requirement of vacuum systems. For obtaining uniaxial AlN films, seeding layer prepared at the initial stage of the growth plays an important role. Growth mechanisms and effects of the seeding layer is discussed based upon optical and miscrostructural analyses.</description><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Atmospheric pressure</subject><subject>Chemical vapor deposition</subject><subject>CVD</subject><subject>Electrical resistivity</subject><subject>Low energy cost process</subject><subject>Low temperature</subject><subject>Nucleation</subject><subject>Organic chemistry</subject><subject>Substrates</subject><subject>Thermal conductivity</subject><subject>Thin film</subject><subject>Thin films</subject><subject>Vacuum systems</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpF0E1r3DAQBmBTWmia9Ni7oGen-rAs-Vg2SVtYyCXkKsbyKJaxLVeSCZtfH-9uSC4awTwzMG9R_GD0mjPa_BosxjTwa9ZQoT8VF0xUuqylkJ-3v9a8pKoSX4tvKQ2U1rwS-qJ42YdnknFaMEJeIxKYO-IgZfIUw3PuSXAkzFh2PqLNPswwjodTbyYwrpOf14nMPkffIXF-nEh7IJCnkJYeo7dkiZjScXEP49HsHm_IhLkP3VXxxcGY8PtbvSwe7m4fdn_L_f2ff7vf-9JKpXLZYadZ3dbCCqt0JWXFZVtzZA2Aq1xDu7bplNJMMieAS5CtdI2GGjelUVwWP89rlxj-r5iyGcIatzuS4VwrWilesU2VZ2VjSCmiM0v0E8SDYdQc0zVv6ZpTupu_PfshZXjCdw0xezvih-bKNKf3NPfetz1Eg7N4BWZ-iZ0</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>SAKAMOTO, Naonori</creator><creator>SUZUKI, Takaya</creator><creator>KAWAGUCHI, Takahiko</creator><creator>WAKIYA, Naoki</creator><creator>SUZUKI, Hisao</creator><general>The Ceramic Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20190901</creationdate><title>Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method</title><author>SAKAMOTO, Naonori ; SUZUKI, Takaya ; KAWAGUCHI, Takahiko ; WAKIYA, Naoki ; SUZUKI, Hisao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Atmospheric pressure</topic><topic>Chemical vapor deposition</topic><topic>CVD</topic><topic>Electrical resistivity</topic><topic>Low energy cost process</topic><topic>Low temperature</topic><topic>Nucleation</topic><topic>Organic chemistry</topic><topic>Substrates</topic><topic>Thermal conductivity</topic><topic>Thin film</topic><topic>Thin films</topic><topic>Vacuum systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SAKAMOTO, Naonori</creatorcontrib><creatorcontrib>SUZUKI, Takaya</creatorcontrib><creatorcontrib>KAWAGUCHI, Takahiko</creatorcontrib><creatorcontrib>WAKIYA, Naoki</creatorcontrib><creatorcontrib>SUZUKI, Hisao</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SAKAMOTO, Naonori</au><au>SUZUKI, Takaya</au><au>KAWAGUCHI, Takahiko</au><au>WAKIYA, Naoki</au><au>SUZUKI, Hisao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. Ceram. Soc. Japan</addtitle><date>2019-09-01</date><risdate>2019</risdate><volume>127</volume><issue>9</issue><spage>612</spage><epage>616</epage><pages>612-616</pages><issn>1882-0743</issn><eissn>1348-6535</eissn><abstract>Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally grown AlN film by atmospheric pressure halide CVD method, in which AlN films grow under air pressure without any requirement of vacuum systems. For obtaining uniaxial AlN films, seeding layer prepared at the initial stage of the growth plays an important role. Growth mechanisms and effects of the seeding layer is discussed based upon optical and miscrostructural analyses.</abstract><cop>Tokyo</cop><pub>The Ceramic Society of Japan</pub><doi>10.2109/jcersj2.19038</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
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1348-6535
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source J-STAGE (Japan Science & Technology Information Aggregator, Electronic) - Open Access English articles
subjects Aluminum
Aluminum nitride
Atmospheric pressure
Chemical vapor deposition
CVD
Electrical resistivity
Low energy cost process
Low temperature
Nucleation
Organic chemistry
Substrates
Thermal conductivity
Thin film
Thin films
Vacuum systems
title Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T08%3A05%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20and%20fast%20growth%20of%20one-directionally%20grown%20aluminum%20nitride%20film%20by%20atmospheric%20pressure%20halide%20CVD%20method&rft.jtitle=Journal%20of%20the%20Ceramic%20Society%20of%20Japan&rft.au=SAKAMOTO,%20Naonori&rft.date=2019-09-01&rft.volume=127&rft.issue=9&rft.spage=612&rft.epage=616&rft.pages=612-616&rft.issn=1882-0743&rft.eissn=1348-6535&rft_id=info:doi/10.2109/jcersj2.19038&rft_dat=%3Cproquest_cross%3E2287047241%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c577t-ded816b63c3c78455425b62e19aaf4f90db9d778151f3a25a5b5f98a6eb628e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2287047241&rft_id=info:pmid/&rfr_iscdi=true