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Microstructural, optical and electrochromical properties of W-doped Nb2O5 thin films prepared by dip-coating process using sols obtained by the chloroalkoxide route
Undoped and W-doped Nb 2 O 5 thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the influence of W doping on their structural and morphological properties. The synthesized Nb 2 O 5 thin films have been...
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Published in: | Journal of materials science. Materials in electronics 2019-10, Vol.30 (19), p.17999-18014 |
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container_end_page | 18014 |
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container_start_page | 17999 |
container_title | Journal of materials science. Materials in electronics |
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creator | Kumar, Anil Sahay, P. P. |
description | Undoped and W-doped Nb
2
O
5
thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the influence of W doping on their structural and morphological properties. The synthesized Nb
2
O
5
thin films have been found to possess an orthorhombic crystal structure having crystallite sizes 10–31 nm. The UV–visible spectroscopy shows the optical bandgap ~ 3.60 eV. The cyclic voltammetric studies show that the colouration efficiency of the films improves upon W doping with the optimum value of 68.7 cm
2
/C at 600 nm for the 3 at.% W-doped film. The chronoamperometric studies reveal that the switching response of the films becomes better upon W doping. The electrochemical impedance spectroscopy (EIS) data has been analyzed by fitting it to the equivalent electrical circuit (EEC) using Nova software. |
doi_str_mv | 10.1007/s10854-019-02153-8 |
format | article |
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2
O
5
thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the influence of W doping on their structural and morphological properties. The synthesized Nb
2
O
5
thin films have been found to possess an orthorhombic crystal structure having crystallite sizes 10–31 nm. The UV–visible spectroscopy shows the optical bandgap ~ 3.60 eV. The cyclic voltammetric studies show that the colouration efficiency of the films improves upon W doping with the optimum value of 68.7 cm
2
/C at 600 nm for the 3 at.% W-doped film. The chronoamperometric studies reveal that the switching response of the films becomes better upon W doping. The electrochemical impedance spectroscopy (EIS) data has been analyzed by fitting it to the equivalent electrical circuit (EEC) using Nova software.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-02153-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Atomic force microscopy ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Circuits ; Crystal structure ; Crystallites ; Crystals ; Dip coatings ; Doped films ; Doping ; Electrochemical impedance spectroscopy ; Immersion coating ; Materials Science ; Microscopy ; Niobium oxides ; Optical and Electronic Materials ; Optical properties ; Spectrum analysis ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2019-10, Vol.30 (19), p.17999-18014</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-ad9fcb5a21e75d180bf03265c04213d6395f89e96b87f8509d4f88ab89c2df843</citedby><cites>FETCH-LOGICAL-c319t-ad9fcb5a21e75d180bf03265c04213d6395f89e96b87f8509d4f88ab89c2df843</cites><orcidid>0000-0003-4188-7819</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kumar, Anil</creatorcontrib><creatorcontrib>Sahay, P. P.</creatorcontrib><title>Microstructural, optical and electrochromical properties of W-doped Nb2O5 thin films prepared by dip-coating process using sols obtained by the chloroalkoxide route</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Undoped and W-doped Nb
2
O
5
thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the influence of W doping on their structural and morphological properties. The synthesized Nb
2
O
5
thin films have been found to possess an orthorhombic crystal structure having crystallite sizes 10–31 nm. The UV–visible spectroscopy shows the optical bandgap ~ 3.60 eV. The cyclic voltammetric studies show that the colouration efficiency of the films improves upon W doping with the optimum value of 68.7 cm
2
/C at 600 nm for the 3 at.% W-doped film. The chronoamperometric studies reveal that the switching response of the films becomes better upon W doping. The electrochemical impedance spectroscopy (EIS) data has been analyzed by fitting it to the equivalent electrical circuit (EEC) using Nova software.</description><subject>Atomic force microscopy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Circuits</subject><subject>Crystal structure</subject><subject>Crystallites</subject><subject>Crystals</subject><subject>Dip coatings</subject><subject>Doped films</subject><subject>Doping</subject><subject>Electrochemical impedance spectroscopy</subject><subject>Immersion coating</subject><subject>Materials Science</subject><subject>Microscopy</subject><subject>Niobium oxides</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kctuGyEYhVGUSHWcvEBXSNmWlMvggWVk9Sal8SZRs0MMFxtnPEyBkZL36YMGeyp11xU68J3z_-IA8JHgW4Jx-zkTLHiDMJEIU8IZEmdgQXjLUCPo8zlYYMlb1HBKP4DLnPcY41XDxAL8-RlMirmkyZQp6f4TjGMJRvdQDxa63pmSotmleDhdjimOLpXgMowe_kK2SgsfOrrhsOzCAH3oD7libtSpvnRv0IYRmahLGLZHu3E5wykfVY59jemKDsOMlp2DZtfHFHX_El-DdTDFqbgrcOF1n93133MJnr5-eVx_R_ebbz_Wd_fIMCIL0lZ603FNiWu5JQJ3HjO64gY3lDC7YpJ7IZ1cdaL1gmNpGy-E7oQ01HrRsCW4mXPrnr8nl4vaxykNdaSiVLSUEMraStGZOn5cTs6rMYWDTm-KYHVsQ81tqNqGOrWhRDWx2ZQrPGxd-hf9H9c7jKmQzQ</recordid><startdate>20191001</startdate><enddate>20191001</enddate><creator>Kumar, Anil</creator><creator>Sahay, P. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Anil</au><au>Sahay, P. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructural, optical and electrochromical properties of W-doped Nb2O5 thin films prepared by dip-coating process using sols obtained by the chloroalkoxide route</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-10-01</date><risdate>2019</risdate><volume>30</volume><issue>19</issue><spage>17999</spage><epage>18014</epage><pages>17999-18014</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Undoped and W-doped Nb
2
O
5
thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the influence of W doping on their structural and morphological properties. The synthesized Nb
2
O
5
thin films have been found to possess an orthorhombic crystal structure having crystallite sizes 10–31 nm. The UV–visible spectroscopy shows the optical bandgap ~ 3.60 eV. The cyclic voltammetric studies show that the colouration efficiency of the films improves upon W doping with the optimum value of 68.7 cm
2
/C at 600 nm for the 3 at.% W-doped film. The chronoamperometric studies reveal that the switching response of the films becomes better upon W doping. The electrochemical impedance spectroscopy (EIS) data has been analyzed by fitting it to the equivalent electrical circuit (EEC) using Nova software.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-02153-8</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0003-4188-7819</orcidid></addata></record> |
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source | Springer Nature |
subjects | Atomic force microscopy Characterization and Evaluation of Materials Chemistry and Materials Science Circuits Crystal structure Crystallites Crystals Dip coatings Doped films Doping Electrochemical impedance spectroscopy Immersion coating Materials Science Microscopy Niobium oxides Optical and Electronic Materials Optical properties Spectrum analysis Thin films |
title | Microstructural, optical and electrochromical properties of W-doped Nb2O5 thin films prepared by dip-coating process using sols obtained by the chloroalkoxide route |
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