MEMS-Based RF Oscillators Using SiCer Technology: New Integration, Packaging, and Assembly Concepts

In state-of-the-art RF receiver systems, the number of microelectromechanical systems (MEMS)-based devices is rapidly rising [1]. MEMS devices and circuits have become important for tasks formerly performed solely by microelectronic components, such as switches [2], reference oscillators [3], and fi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave magazine 2019-10, Vol.20 (10), p.71-85
Main Authors: Stegner, Johannes, Fischer, Michael, Gropp, Sebastian, Stehr, Uwe, Hein, Matthias A.
Format: Magazinearticle
Language:English
Subjects:
Bit error rate
Electrical properties
Form factors
Frequency ranges
Mechanical components
Microelectromechanical systems
Micromechanical devices
Mobile communication systems
Oscillators
Performance evaluation
Quartz crystals
Radio frequency
Receivers
Subsystems
Switches
Task analysis
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In state-of-the-art RF receiver systems, the number of microelectromechanical systems (MEMS)-based devices is rapidly rising [1]. MEMS devices and circuits have become important for tasks formerly performed solely by microelectronic components, such as switches [2], reference oscillators [3], and filters [4]. Furthermore, they deliver small form factors in the submicron range and are compatible with semiconductor processes [5], which is not the case for all types of mechanical components, such as quartz crystals [6]. Modern thin-film microsystem technologies push the usable frequency range of MEMS components into the gigahertz range and improve their electrical properties, resulting in low-noise multiphysical RF subsystems. This makes MEMS suitable even for mobile communication standards with strict requirements in terms of bit error rate and errorvector magnitude (EVM) [7], [8].
ISSN:1527-3342
1557-9581
DOI:10.1109/MMM.2019.2928678