Effects of fluorine based double plasma treatment on electrical and reliability characteristics of Ge pMOSFETs

In order to reduce bombardment or chemical etching damage of Ge pMOSFET treated by F-based plasma, an additional O2 or/and N2 plasma treatment was applied on the high-k gate dielectric in this work. The sample treated by F-based plasma followed with O2 and N2 plasma exhibits a lower off-state curren...

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Bibliographic Details
Published in:Microelectronic engineering 2019-07, Vol.215, p.111025, Article 111025
Main Authors: Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Yi, Shih-Han, Liu, Guan-Ting, Chiu, Po-Chen, Li, Yan-Lin
Format: Article
Language:English
Subjects:
Bombardment
Carrier mobility
Chemical damage
Chemical etching
Current carriers
Current leakage
Double plasma treatment
Electric currents
Etching
F-based plasma
Fluorine
Gates
Ge pMOSFET
High-k gate dielectric
Interfacial layer
Leakage current
MOSFETs
Nitrogen plasma
Organic chemistry
Reliability
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Summary:In order to reduce bombardment or chemical etching damage of Ge pMOSFET treated by F-based plasma, an additional O2 or/and N2 plasma treatment was applied on the high-k gate dielectric in this work. The sample treated by F-based plasma followed with O2 and N2 plasma exhibits a lower off-state current, gate leakage current, sub-threshold swing and interface trap density simultaneously; meanwhile, the on-state current and carrier mobility are similar. Also, the better uniformity and reliability characteristics can be achieved. A F-based double plasma treatment is a promising technique to effectively passivate oxide traps and enhance performance of Ge MOSFETs without EOT degradation. [Display omitted] •Effects of F followed with O2 and/or N2 plasma treatment on Ge pMOSFETs were investigated.•Ge pMOSFET treated by F followed with O2 and N2 plasma exhibits a lower Ioff, Jg, SS, and Dit.•The better uniformity and reliability characteristics can be also achieved.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2019.111025