Ferroelectric HfZrO2 FETs for steep switch onset

The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (

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Bibliographic Details
Published in:Microelectronic engineering 2019-07, Vol.215, p.110991, Article 110991
Main Authors: Chen, K.-T., Liao, C.-Y., Chen, H.-Y., Lo, C., Siang, G.-Y., Lin, Y.-Y., Tseng, Y.-J., Chang, C., Chueh, C.-Y., Yang, Y.-J., Liao, M.-H., Li, K.-S., Chang, S.T., Lee, M.H.
Format: Article
Language:English
Subjects:
Annealing
Capacitance
CMOS
Coercivity
Electric potential
Electromagnetism
Fe-FETs
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Hafnium
HZO
Negative capacitance
Onset voltage
Voltage
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Description
Summary:The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2019.110991