Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been depo...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2019-09, Vol.13 (9), p.n/a
Main Authors: Zou, Chen, He, Lijun, Lin, Lih Y.
Format: Article
Language:English
Subjects:
Arrays
Bending stresses
Commercialization
Data storage
device stability
Electric potential
inorganic perovskites
memory arrays
Memory devices
Metal halides
Perovskites
Random access memory
resistive switching
Stability
Substrates
Thin films
vacuum deposition
Voltage
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Summary:Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been deposited by lab‐scale solution‐processed methods. They are not directly applicable to larger‐scale and volume manufacturing, hindering the commercialization of this technology. Herein, the performance of memory devices based on vacuum‐deposited inorganic perovskite (VDIP) is investigated for the first time. The optimized VDIP‐based memory devices exhibit reliable and reproducible resistive switching (RS) behaviors with a high on–off ratio (>100), low set/reset voltage (
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201900182