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NbOx based memristor as artificial synapse emulating short term plasticity

Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of c...

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Published in:AIP advances 2019-09, Vol.9 (9), p.095022-095022-5
Main Authors: Deswal, Sweety, Kumar, Ashok, Kumar, Ajeet
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cited_by cdi_FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283
cites cdi_FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283
container_end_page 095022-5
container_issue 9
container_start_page 095022
container_title AIP advances
container_volume 9
creator Deswal, Sweety
Kumar, Ashok
Kumar, Ajeet
description Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.
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fullrecord <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_proquest_journals_2291069713</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_88b291b7090240419d0e099d3d3178f1</doaj_id><sourcerecordid>2291069713</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283</originalsourceid><addsrcrecordid>eNqdkE9LxDAQxYsoKOrBbxDwpLBrJmnT5CiLf1nci57DJE21S7upSVbcb290RT07lxmG37w3vKI4AToFKvgFTCsAqSTdKQ4YVHLCGRO7f-b94jjGJc1VKqCyPCjuH8zinRiMriGDG0IXkw8EI8GQurazHfYkblY4RkfcsO4xdatnEl98SCS5MJCxx5gylzZHxV6LfXTH3_2weLq-epzdTuaLm7vZ5XxiSybTRDBJXfbHRlCoWWU5glUt1tQI7sAaYFYYU1som6o2tQQUFWLpBK2sZZIfFndb3cbjUo-hGzBstMdOfy18eNafz9veaSkNU2BqqigraQmqydZKNbzhUMsWstbpVmsM_nXtYtJLvw6r_L5m-ZIKVQPP1NmWssHHGFz74wpUfyavQX8nn9nzLRtzJjktv_of_ObDL6jHpuUfDZWPnA</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2291069713</pqid></control><display><type>article</type><title>NbOx based memristor as artificial synapse emulating short term plasticity</title><source>AIP Open Access Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Deswal, Sweety ; Kumar, Ashok ; Kumar, Ajeet</creator><creatorcontrib>Deswal, Sweety ; Kumar, Ashok ; Kumar, Ajeet</creatorcontrib><description>Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5118980</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Biological activity ; Memristors ; Niobium oxides ; Plastic properties ; Resistance ; Short term ; Signal processing</subject><ispartof>AIP advances, 2019-09, Vol.9 (9), p.095022-095022-5</ispartof><rights>Author(s)</rights><rights>2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283</citedby><cites>FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283</cites><orcidid>0000-0002-4878-505X ; 0000-0001-5034-925X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/adv/article-lookup/doi/10.1063/1.5118980$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27890,27924,27925,76408</link.rule.ids></links><search><creatorcontrib>Deswal, Sweety</creatorcontrib><creatorcontrib>Kumar, Ashok</creatorcontrib><creatorcontrib>Kumar, Ajeet</creatorcontrib><title>NbOx based memristor as artificial synapse emulating short term plasticity</title><title>AIP advances</title><description>Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.</description><subject>Biological activity</subject><subject>Memristors</subject><subject>Niobium oxides</subject><subject>Plastic properties</subject><subject>Resistance</subject><subject>Short term</subject><subject>Signal processing</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AJDQP</sourceid><sourceid>DOA</sourceid><recordid>eNqdkE9LxDAQxYsoKOrBbxDwpLBrJmnT5CiLf1nci57DJE21S7upSVbcb290RT07lxmG37w3vKI4AToFKvgFTCsAqSTdKQ4YVHLCGRO7f-b94jjGJc1VKqCyPCjuH8zinRiMriGDG0IXkw8EI8GQurazHfYkblY4RkfcsO4xdatnEl98SCS5MJCxx5gylzZHxV6LfXTH3_2weLq-epzdTuaLm7vZ5XxiSybTRDBJXfbHRlCoWWU5glUt1tQI7sAaYFYYU1som6o2tQQUFWLpBK2sZZIfFndb3cbjUo-hGzBstMdOfy18eNafz9veaSkNU2BqqigraQmqydZKNbzhUMsWstbpVmsM_nXtYtJLvw6r_L5m-ZIKVQPP1NmWssHHGFz74wpUfyavQX8nn9nzLRtzJjktv_of_ObDL6jHpuUfDZWPnA</recordid><startdate>201909</startdate><enddate>201909</enddate><creator>Deswal, Sweety</creator><creator>Kumar, Ashok</creator><creator>Kumar, Ajeet</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-4878-505X</orcidid><orcidid>https://orcid.org/0000-0001-5034-925X</orcidid></search><sort><creationdate>201909</creationdate><title>NbOx based memristor as artificial synapse emulating short term plasticity</title><author>Deswal, Sweety ; Kumar, Ashok ; Kumar, Ajeet</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Biological activity</topic><topic>Memristors</topic><topic>Niobium oxides</topic><topic>Plastic properties</topic><topic>Resistance</topic><topic>Short term</topic><topic>Signal processing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deswal, Sweety</creatorcontrib><creatorcontrib>Kumar, Ashok</creatorcontrib><creatorcontrib>Kumar, Ajeet</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deswal, Sweety</au><au>Kumar, Ashok</au><au>Kumar, Ajeet</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>NbOx based memristor as artificial synapse emulating short term plasticity</atitle><jtitle>AIP advances</jtitle><date>2019-09</date><risdate>2019</risdate><volume>9</volume><issue>9</issue><spage>095022</spage><epage>095022-5</epage><pages>095022-095022-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5118980</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4878-505X</orcidid><orcidid>https://orcid.org/0000-0001-5034-925X</orcidid><oa>free_for_read</oa></addata></record>
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subjects Biological activity
Memristors
Niobium oxides
Plastic properties
Resistance
Short term
Signal processing
title NbOx based memristor as artificial synapse emulating short term plasticity
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T16%3A08%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=NbOx%20based%20memristor%20as%20artificial%20synapse%20emulating%20short%20term%20plasticity&rft.jtitle=AIP%20advances&rft.au=Deswal,%20Sweety&rft.date=2019-09&rft.volume=9&rft.issue=9&rft.spage=095022&rft.epage=095022-5&rft.pages=095022-095022-5&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/1.5118980&rft_dat=%3Cproquest_doaj_%3E2291069713%3C/proquest_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c428t-6280e049ad601725c3a1c9fa70b63e1cb12c6bb7c14d57b781a65aa4e605cc283%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2291069713&rft_id=info:pmid/&rfr_iscdi=true