Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Mixed‐valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed‐valence‐driven quasi‐1D SnIISnIVS3 crystal, which e...

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Bibliographic Details
Published in:Advanced functional materials 2019-09, Vol.29 (38), p.n/a
Main Authors: Yang, Huai, Pan, Longfei, Wang, Xiaoting, Deng, Hui‐Xiong, Zhong, Mianzeng, Zhou, Ziqi, Lou, Zheng, Shen, Guozhen, Wei, Zhongming
Format: Article
Language:English
Subjects:
Anisotropy
Asymmetry
Dichroism
Electromagnetic absorption
Materials science
mixed‐valence
Nanowires
Photometers
Polarization
polarization‐sensitive
Polyethylene terephthalate
quasi‐1D
SnIISnIVS3
Substrates
UV–vis–NIR
Valence
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Summary:Mixed‐valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed‐valence‐driven quasi‐1D SnIISnIVS3 crystal, which exhibits widely and distinctively anisotropic polarized‐light absorption reaching ≈3.4 from the deep ultraviolet to near‐infrared region (250–850 nm). The fabricated polarization‐sensitive photodetectors based on highly air‐stable SnIISnIVS3 nanowires display strong linear dichroism among the UV–vis–NIR spectrum with responsivity exceeding ≈150 A W−1. Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed‐valence‐driven quasi‐1D ternary sulfide SnIISnIVS3 excites interest in low‐symmetry semiconductors for developing broadly spectral polarization‐sensitive photodetectors with environmental stability and mechanical flexibility. The group IV–VI ternary sulfide compound SnIISnIVS3 belongs to a mixed‐valence‐driven quasi‐1D material. The structural, vibrational, absorptive, optical, and optoelectronic anisotropies are systematically demonstrated by theory and experiment. The polarization‐sensitive photodetectors based on the SnIISnIVS3 material display high responsivity and lineally dichroic ratio covering the UV–vis–NIR spectrum.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201904416