ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: design validation

This paper describes the development of a power amplifier operating over a 2.4–2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method w...

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Bibliographic Details
Published in:International journal of microwave and wireless technologies 2019-09, Vol.11 (7), p.546-553
Main Authors: Góralczyk, Marcin, Wojtasiak, Wojciech
Format: Article
Language:English
Subjects:
Amplification
Amplifier design
Efficiency
Frequency ranges
High gain
Load
MIKON 2018
Power amplifiers
Transistors
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Summary:This paper describes the development of a power amplifier operating over a 2.4–2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method was used to achieve even 30% more output power than the CGH40010 transistor was specified to deliver while maintaining high gain and high efficiency. Furthermore, an accuracy analysis of amplifier design was also conducted. It included validation and correction of the available transistor models as well as validation of the models of microstrip circuits implemented in ADS. Finally, it was concluded that both the mentioned sources of errors contributed at a similar level.
ISSN:1759-0787
1759-0795
DOI:10.1017/S1759078719000631