Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2019, Vol.7, p.869-877
Main Authors: Kim, Sanghyeon, Song, Jin Dong, Alam, M. A., Kim, Hyung-Jun, Kim, Seong Kwang, Shin, Sanghoon, Han, Jae-Hoon, Geum, Dae-Myeong, Shim, Jae-Phil, Lee, Subin, Kim, Hansung, Ju, Gunwu
Format: Article
Language:English
Subjects:
Bypasses
Electric contacts
Electrical resistivity
Heat
Indium gallium arsenide
Indium gallium arsenides
InGaAs MOSFETs
InGaAs-OI
Molybdenum
monolithic 3D
MOSFET
MOSFETs
Ni-InGaAs
Nickel
Reliability
Self alignment
self-heating
Semiconductor devices
Thermal resistance
Thermal stability
Transistors
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Summary:Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2019.2907957