Evaluation of optical parameters and characterization of few layer sputtered MoS2 film by spectroscopic ellipsometry

The study involves spectroscopic ellipsometry analysis of sputter deposited few layer MoS 2 grown on three different substrates (ITO coated glass, n-silicon and p-silicon) for diverse deposition time. We have investigated optical parameters such as refractive index, extinction coefficient and dielec...

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Bibliographic Details
Published in:Optical and quantum electronics 2019-10, Vol.51 (10), p.1-16, Article 326
Main Authors: Singh, Richa, Tripathi, Shweta
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Glass substrates
Lasers
Mathematical models
Molybdenum disulfide
Morphology
Optical Devices
Optics
Parameters
Photonics
Physics
Physics and Astronomy
Refractivity
Silicon
Spectroellipsometry
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Summary:The study involves spectroscopic ellipsometry analysis of sputter deposited few layer MoS 2 grown on three different substrates (ITO coated glass, n-silicon and p-silicon) for diverse deposition time. We have investigated optical parameters such as refractive index, extinction coefficient and dielectric constant of MoS 2 layers in the visible region of electromagnetic spectrum. For such purpose of investigation we have involved Cauchy dispersion model (for the film deposited on n-silicon and p-silicon) and hybrid of Lorentz and Drude model (for the film deposited on ITO coated glass). Furthermore, comparative analysis at the diverse growth time of 5, 10, 15 and 20 min has been performed on the basis of optical parameters and surface morphology.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-019-2041-3