Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors

A metal ion threshold switch (MITS) based on an Ag/TiN/HfO 2 /Pt stack is experimentally demonstrated with improved endurance. The incorporation of a low-temperature atomic layer deposition (ALD) TiN layer as an efficient diffusion barrier enables optimum Ag infiltration during the electroforming st...

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Bibliographic Details
Published in:IEEE electron device letters 2019-10, Vol.40 (10), p.1602-1605
Main Authors: Grisafe, Benjamin, Jerry, Matthew, Smith, Jeffrey A., Datta, Suman
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
conducting filament
Delays
diffusion barrier
Diffusion barriers
Diffusion layers
Electrodes
Electroforming
Endurance
Hafnium oxide
ion diffusion
ion relaxation
Ions
Linearity
Metal ion threshold switch
Metal ions
metal work function
Performance enhancement
Platinum
Selectors
Silver
Switches
Threshold voltage
Tin
Work functions
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Summary:A metal ion threshold switch (MITS) based on an Ag/TiN/HfO 2 /Pt stack is experimentally demonstrated with improved endurance. The incorporation of a low-temperature atomic layer deposition (ALD) TiN layer as an efficient diffusion barrier enables optimum Ag infiltration during the electroforming step. Further, the tunability of the threshold voltage (V TS ) from 0.25 to 1.1V via bottom electrode (BE) work function engineering is demonstrated. The Ag/TiN/HfO 2 /Al MITS selector exhibits a 4.4× increase in V TS , 100 μA ON-current handling capability, low leakage (~10 pA), 10 7 half-bias non-linearity and fast (
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2936104