P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs

The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.645-649
Main Authors: Mo, Qiong-hua, Cho, An-Thung, Liu, Kai-jun, Hsu, James, Hu, Yun-qin, Chen, Wade, Lu, York
Format: Article
Language:English
Subjects:
Circuit design
Computer simulation
Driver circuits
Power consumption
Production costs
Test procedures
Variations
Citations: Items that this one cites
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Description
Summary:The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during design stage. The testing method and corner modeling for process fluctuation are discussed in this paper. The bin model methodology is also used to help optimize the W/L size of GOA drive circuit. A high reliable A‐Si TFT GOA was designed by combining the usage of corner model and bin model.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13598