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P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs
The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during...
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Published in: | SID International Symposium Digest of technical papers 2019-09, Vol.50 (S1), p.645-649 |
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creator | Mo, Qiong-hua Cho, An-Thung Liu, Kai-jun Hsu, James Hu, Yun-qin Chen, Wade Lu, York |
description | The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during design stage. The testing method and corner modeling for process fluctuation are discussed in this paper. The bin model methodology is also used to help optimize the W/L size of GOA drive circuit. A high reliable A‐Si TFT GOA was designed by combining the usage of corner model and bin model. |
doi_str_mv | 10.1002/sdtp.13598 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2300543242</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2300543242</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1058-bc9cc3e66327e1bb60778c7ef1ada3c1a31f1ab34777d9c364ce7caf3ac1ed683</originalsourceid><addsrcrecordid>eNp9kEFLwzAYhoMoOKcXf0HAm9CaNG3Sepubm8Jkg1XwFtI0HRldMpNWmSd_gr_RX2JnPXv63sPzvh88AFxiFGKEohtfNrsQkyRLj8AgwjQNEE6yYzBAKGNBRunLKTjzfoMQIXGcDcBm-f35hcP4Fo6tM8pBYUp4p43RZg2fbKlquNLbthaNtgbaCubTHFbWwdliBEun37qK1E62uoHawFkaUlgLt1bdrNcf6sB3cT6e-HNwUonaq4u_OwTP0_t8_BDMF7PH8WgeSIySNChkJiVRlJKIKVwUFDGWSqYqLEpBJBYEd7EgMWOszCShsVRMiooIiVVJUzIEV_3uztnXVvmGb2zrTPeSRwShJCZRHHXUdU9JZ713quI7p7fC7TlG_OCSH1zyX5cdjHv4Xddq_w_JV5N82Xd-AIpAd_A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2300543242</pqid></control><display><type>article</type><title>P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs</title><source>Wiley-Blackwell Read & Publish Collection</source><creator>Mo, Qiong-hua ; Cho, An-Thung ; Liu, Kai-jun ; Hsu, James ; Hu, Yun-qin ; Chen, Wade ; Lu, York</creator><creatorcontrib>Mo, Qiong-hua ; Cho, An-Thung ; Liu, Kai-jun ; Hsu, James ; Hu, Yun-qin ; Chen, Wade ; Lu, York</creatorcontrib><description>The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during design stage. The testing method and corner modeling for process fluctuation are discussed in this paper. The bin model methodology is also used to help optimize the W/L size of GOA drive circuit. A high reliable A‐Si TFT GOA was designed by combining the usage of corner model and bin model.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.13598</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Circuit design ; Computer simulation ; Driver circuits ; Power consumption ; Production costs ; Test procedures ; Variations</subject><ispartof>SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.645-649</ispartof><rights>2019 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1058-bc9cc3e66327e1bb60778c7ef1ada3c1a31f1ab34777d9c364ce7caf3ac1ed683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Mo, Qiong-hua</creatorcontrib><creatorcontrib>Cho, An-Thung</creatorcontrib><creatorcontrib>Liu, Kai-jun</creatorcontrib><creatorcontrib>Hsu, James</creatorcontrib><creatorcontrib>Hu, Yun-qin</creatorcontrib><creatorcontrib>Chen, Wade</creatorcontrib><creatorcontrib>Lu, York</creatorcontrib><title>P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs</title><title>SID International Symposium Digest of technical papers</title><description>The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during design stage. The testing method and corner modeling for process fluctuation are discussed in this paper. The bin model methodology is also used to help optimize the W/L size of GOA drive circuit. A high reliable A‐Si TFT GOA was designed by combining the usage of corner model and bin model.</description><subject>Circuit design</subject><subject>Computer simulation</subject><subject>Driver circuits</subject><subject>Power consumption</subject><subject>Production costs</subject><subject>Test procedures</subject><subject>Variations</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLwzAYhoMoOKcXf0HAm9CaNG3Sepubm8Jkg1XwFtI0HRldMpNWmSd_gr_RX2JnPXv63sPzvh88AFxiFGKEohtfNrsQkyRLj8AgwjQNEE6yYzBAKGNBRunLKTjzfoMQIXGcDcBm-f35hcP4Fo6tM8pBYUp4p43RZg2fbKlquNLbthaNtgbaCubTHFbWwdliBEun37qK1E62uoHawFkaUlgLt1bdrNcf6sB3cT6e-HNwUonaq4u_OwTP0_t8_BDMF7PH8WgeSIySNChkJiVRlJKIKVwUFDGWSqYqLEpBJBYEd7EgMWOszCShsVRMiooIiVVJUzIEV_3uztnXVvmGb2zrTPeSRwShJCZRHHXUdU9JZ713quI7p7fC7TlG_OCSH1zyX5cdjHv4Xddq_w_JV5N82Xd-AIpAd_A</recordid><startdate>201909</startdate><enddate>201909</enddate><creator>Mo, Qiong-hua</creator><creator>Cho, An-Thung</creator><creator>Liu, Kai-jun</creator><creator>Hsu, James</creator><creator>Hu, Yun-qin</creator><creator>Chen, Wade</creator><creator>Lu, York</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201909</creationdate><title>P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs</title><author>Mo, Qiong-hua ; Cho, An-Thung ; Liu, Kai-jun ; Hsu, James ; Hu, Yun-qin ; Chen, Wade ; Lu, York</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1058-bc9cc3e66327e1bb60778c7ef1ada3c1a31f1ab34777d9c364ce7caf3ac1ed683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Circuit design</topic><topic>Computer simulation</topic><topic>Driver circuits</topic><topic>Power consumption</topic><topic>Production costs</topic><topic>Test procedures</topic><topic>Variations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mo, Qiong-hua</creatorcontrib><creatorcontrib>Cho, An-Thung</creatorcontrib><creatorcontrib>Liu, Kai-jun</creatorcontrib><creatorcontrib>Hsu, James</creatorcontrib><creatorcontrib>Hu, Yun-qin</creatorcontrib><creatorcontrib>Chen, Wade</creatorcontrib><creatorcontrib>Lu, York</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mo, Qiong-hua</au><au>Cho, An-Thung</au><au>Liu, Kai-jun</au><au>Hsu, James</au><au>Hu, Yun-qin</au><au>Chen, Wade</au><au>Lu, York</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2019-09</date><risdate>2019</risdate><volume>50</volume><issue>S1</issue><spage>645</spage><epage>649</epage><pages>645-649</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>The design methodology for gate driving circuit (GOA) is critical to reduce the production cost and power consumption for TFT‐LCD. The process fluctuation in the manufacturing of TFT can cause the malfunction of GOA. TFT compact model is the key to take process fluctuation into consideration during design stage. The testing method and corner modeling for process fluctuation are discussed in this paper. The bin model methodology is also used to help optimize the W/L size of GOA drive circuit. A high reliable A‐Si TFT GOA was designed by combining the usage of corner model and bin model.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.13598</doi><tpages>5</tpages></addata></record> |
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subjects | Circuit design Computer simulation Driver circuits Power consumption Production costs Test procedures Variations |
title | P‐1.4: Corner and Binning Model Simulation of TFT for GOA driver circuit in G8.6 large‐size TFT‐LCDs |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T17%3A01%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P%E2%80%901.4:%20Corner%20and%20Binning%20Model%20Simulation%20of%20TFT%20for%20GOA%20driver%20circuit%20in%20G8.6%20large%E2%80%90size%20TFT%E2%80%90LCDs&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Mo,%20Qiong-hua&rft.date=2019-09&rft.volume=50&rft.issue=S1&rft.spage=645&rft.epage=649&rft.pages=645-649&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.13598&rft_dat=%3Cproquest_cross%3E2300543242%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1058-bc9cc3e66327e1bb60778c7ef1ada3c1a31f1ab34777d9c364ce7caf3ac1ed683%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2300543242&rft_id=info:pmid/&rfr_iscdi=true |