Solid-Phase Transformations in Multilayered (Co40Fe40B20)34(SiO2)66–ZnO (SnO2, In2O3) Films

Multilayered [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /ZnO] 112 , [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /SnO 2 ] 32 , and [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /In 2 O 3 ] 92 films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transforma...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2019-09, Vol.83 (9), p.1116-1121
Main Authors: Kalinin, Yu. E., Sitnikov, A. V., Babkina, I. V., Kashirin, M. A., Makagonov, V. A., Zhilova, O. V.
Format: Article
Language:English
Subjects:
Boron compounds
Buffer layers
Hadrons
Heat treatment
Heavy Ions
Indium oxides
Ion beams
Nuclear Physics
Phase transitions
Physics
Physics and Astronomy
Silicon dioxide
Solid phases
Substrates
Thickness
Tin dioxide
Zinc oxide
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Summary:Multilayered [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /ZnO] 112 , [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /SnO 2 ] 32 , and [(Co 40 Fe 40 B 20 ) 34 (SiO 2 ) 66 /In 2 O 3 ] 92 films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transformations are studied during the thermal treatment of films. Compounds with boron form in films with ZnO and In 2 O 3 buffer layers (Co 2 FeO 2 (BO 3 ) and InBO 3 , respectively). The composition of these compounds is found to depend on the semiconductor that is used and the ratio of layer thickness.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873819090119