Preparation of P-type LaSe2 films with conductivity and mid-infrared transparency by combining magnetron sputtering and selenized annealing

• Published in: Materials letters 2019-11, Vol.254, p.250-253
• Main Authors: Gao, Gang, Yang, Lei, Dai, Bing, Guo, Shuai, Yang, Zhenhuai, Wang, Peng, Geng, Fangjuan, Xu, Liangge, Xia, Fei, Min, Pingping, Zhu, Jiaqi
• Format: Article
• Language: English
• Subjects: Annealing; Carrier density; Conductivity; Electrical properties; Fourier transforms; Hall effect; Infrared spectroscopy; LaSe2 films; Magnetron sputtering; Materials science; Mid-infrared; Morphology; Photoelectric effect; Photoelectricity; Sapphire; Selenized annealing; Sputtering; Substrates; Thin films
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2019.05.115

[Display omitted] •A new P-type transparent conductive LaSe2 film with excellent photoelectric properties is found.•A novel two-step method is used to prepare LaSe2 film.•Effect of annealing time on their photoelectric properties is investigated.•Results indicate that the best annealing time is 2 h. LaSe2 films were prepared on sapphire (0001) substrates by combining magnetron sputtering and selenized annealing. The influence of selenized annealing time on the structures and photoelectric properties of the thin films were investigated using glancing incident X-ray diffraction, fourier transform infrared spectrometry and Hall effect measurements. The results showed that the film had a perfect monoclinic structure and a smooth surface morphology. The average transmittance in the mid-infrared range was greater than 55%, and the highest was 65%. The LaSe2 films had a higher carrier concentration (∼1019 cm−3) and conductivity (∼1.9 S/cm) than those of other P-type transparent conductive films, which showed that LaSe2 was a potential new P-type material.