Microstructure and mechanical properties of ta-C films by pulse-enhanced cathodic arc evaporation: Effect of pulsed current

• Published in: Diamond and related materials 2019-10, Vol.98, p.107479, Article 107479
• Main Authors: Hu, Jian, Tian, Qinwen, Wan, Pengfei, Chen, Bing, Tian, Xiubo, Gong, Chunzghi, Golosov, Dmitriy A.
• Format: Article
• Language: English
• Subjects: Bonding; Discharge; Electric arcs; Emission analysis; Emission spectra; Evaporation; Hardness; Low currents; Mechanical properties; Microstructure; Nanoindentation; Optical properties; Peak current; Pulse-enhanced cathodic arc evaporation; Pulsed current; Raman spectroscopy; Spectrum analysis; Substrates; Ta[sbnd]C films; Thickness
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2019.107479

The ta-C films were fabricated using direct-current cathodic arc evaporation (DC-CAE) and pulse-enhanced cathodic arc evaporation (PE-CAE). The effect of peak currents (Ip) on arc discharge, microstructure and mechanical properties of the films was focused on. The enhanced discharge process, microstructure and mechanical properties of the ta-C films were investigated by means of optical emission spectra (OES), Raman spectroscopy, Nano-indentation, etc. With the same average current, the Ip of 300 A of PE-CAE produced the substrate current of 1.14 A, but a markedly low current (0.82A) was observed for the DC-CAE. The plasma emission intensity of Ar II, C I and C II also increased by about 86%, 66% and 630% at pulse mode. This evidently indicated an enhanced arc discharge by PE-CAE. The highest ratio of CII/ArII (2.98) and electron excitation temperature (1.38 eV) was observed. DC-CAE led to a lower concentration of sp3 bonding (47.3%, ID/IG = 0.39) of ta-C films with a thickness of 171 nm. In contrast, the ta-C films fabricated by PE-CAE (Ip = 300 A) possessed the smallest ID/IG (0.22) as well as the highest concentration of sp3 bonding (65.1%). The thickness increased by about 30% in comparison with that by DC-CAE. The largest thickness (330 nm) was obtained at the peak current of 200A, mainly relating to the increased evaporation of carbon atom/ions. The hardness evaluated from the ta-C films fabricated by DC-CAE was about 29 GPa. However, the hardness increased significantly to 57 GPa by PE-CAE (Ip = 300 A), and the preferable toughness (H/E* of 0.11 and H3/E*2 of 0.68) was simultaneously achieved. [Display omitted] •The ta-C films were fabricated using direct-current cathodic arc evaporation and pulse-enhanced cathodic arc evaporation.•The substrate current was improved from 0.82 A to 1.14 A as the peak current was increased to 300 A.•The peak current of 300 A produced the highest concentration of sp3 bonding in ta-C film.•The highest hardness (56.7 GPa) and preferable toughness (H/E* of 0.11 and H3/E*2 of 0.68) was obtained at 300 A.