A self-biased linear anisotropic magnetoresistance sensor realized by exchange biased bilayers

•AFM/FM bilayers structure was proposed to achieve a linear AMR sensor.•AMR linear sensor was achieved by co-effect of exchange bias and shape anisotropy filed.•The simulation results show great consistency with experimental results. A ferromagnetic/antiferromagnetic (FM/AFM) bilayers structure was...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2020-01, Vol.493, p.165695, Article 165695
Main Authors: Yu, JinBiao, Tang, XiaoLi, Su, Hua, Zhong, ZhiYong
Format: Article
Language:English
Subjects:
AMR linear sensor
Anisotropy
Antiferromagnetism
Bilayers
Exchange bias field
Exchanging
Ferromagnetism
FM/AFM structure
Iron compounds
Linearity
Magnetic moments
Magnetic thin films
Magnetoresistance
Magnetoresistivity
Nickel compounds
Sensors
Shape anisotropy field
Single domain model
Thin films
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Summary:•AFM/FM bilayers structure was proposed to achieve a linear AMR sensor.•AMR linear sensor was achieved by co-effect of exchange bias and shape anisotropy filed.•The simulation results show great consistency with experimental results. A ferromagnetic/antiferromagnetic (FM/AFM) bilayers structure was proposed to act as a new structure to meet the demands of anisotropic magnetoresistance (AMR) linear sensor. Through a single domain model, we found that the direction of initial magnetic moment of FM layer could be modulated by the co-effect of the exchange bias (EB) field along vertical direction and the shape anisotropy field induced by limited regular size magnetic thin film. When the length and width of magnetic thin film are fixed, if a proper magnitude of EB field is adopted, the 45-degree self-biased AMR sensor can be achieved, and vice versa. Following the model, a series of Ta/NiFe/FeMn/Ta samples were grown by changing the EB field and shape anisotropy field, the self-biased sensor cell with high linearity and sensitivity was achieved.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.165695