Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

To improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) after exposure to high energy irradiation, 4-nm polycrystalline AlN (poly-AlN) film formed by annealing at 850 °C is proposed to passivate the GaN cap layer. After exposure to 3-MeV proton irradiation with a fluence o...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2019-10, Vol.66 (10), p.2215-2219
Main Authors: Zhang, Dongliang, Cheng, Xinhong, Shen, Lingyan, Zheng, Li, Gu, Ziyue, Zhou, Wen, Liu, Xiaobo, Yu, Yuehui
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMTs
Aluminum gallium nitrides
Aluminum nitride
dynamic ON-resistance
Electron mobility
Exposure
Fluence
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
Irradiation
MODFETs
Passivation
Passivity
Performance enhancement
poly-AlN passivation
Proton irradiation
Protons
Radiation effects
Semiconductor devices
Surface defects
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) after exposure to high energy irradiation, 4-nm polycrystalline AlN (poly-AlN) film formed by annealing at 850 °C is proposed to passivate the GaN cap layer. After exposure to 3-MeV proton irradiation with a fluence of 3×10 14 cm -2 , the ON-resistances (RON) of AlGaN/GaN MIS-HEMTs with SiNx and poly-AlN passivation increase by 28% and 32%, and the dynamic ON-resistances (Rd,ON) degrade by 2000% and 110% with a 30-V OFF-state and a 5-V ON-state drain bias, respectively. The polarization effect of poly-AlN reduces the energy band of the GaN cap layer and compensates for deep-level surface defects, moreover, the growth of AlN by atom layer deposition with low plasma power make the GaN surface smooth, which contributes to the reliability improvement of AlGaN/GaN HEMTs after the proton-irradiation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2941974