Influence of 120 MeV Si9+ ion irradiation on ZnTe semiconductor thin films

• Published in: Radiation effects and defects in solids 2019-10, Vol.174 (9-10), p.819-827
• Main Authors: Pattar, Jayadev, PrakashBabu, D., Balakrishna, K. M., Mahesh, H. M.
• Format: Article
• Language: English
• Subjects: Crystal structure; Crystallinity; Evaporation; Fluence; Grain growth; Grain size; Ion irradiation; Ions; Irradiation; Morphology; optical properties; Optoelectronic devices; Photovoltaic cells; Scanning electron microscopy; silicon ion beam irradiation; Solar cells; structural properties; Swift heavy ion irradiation (SHI); thermal evaporation; Thin films; X-ray diffraction; Zinc; Zinc telluride; Zinc tellurides; ZnTe thin films
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420150.2019.1662016

ZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120 MeV Si 9+ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1 × 10 11 ions cm −2 . However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31 eV (pristine) to 2.17 eV after irradiation of Si 9+ ions.