Effective Injection of Spins from a Ferromagnetic Metal to the InSb Semiconductor

Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection...

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Bibliographic Details
Published in:JETP letters 2019-08, Vol.110 (4), p.273-278
Main Authors: Viglin, N. A., Tsvelikhovskaya, V. M., Kulesh, N. A., Pavlov, T. N.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Condensed Matter
Electric contacts
Electron spin
Electrons
Ferromagnetism
Indium antimonide
Intermetallic compounds
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Solid State Physics
Spintronics
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Summary:Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364019160100