Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells

Magneto-intersubband oscillations (MISOs) in single quantum wells of the gapless semiconductor HgTe have been studied experimentally. It has been shown that, in contrast to MISOs in double quantum wells based on broadband semiconductors GaAs and InGaAs and theoretical predictions, magnetic fields at...

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Bibliographic Details
Published in:JETP letters 2019-08, Vol.110 (4), p.301-305
Main Authors: Minkov, G. M., Rut, O. E., Sherstobitov, A. A., Dvoretski, S. A., Mikhailov, N. N.
Format: Article
Language:English
Subjects:
Antinodes
Atomic
Biological and Medical Physics
Biophysics
Broadband
Condensed Matter
Indium gallium arsenides
Magnetoresistance
Magnetoresistivity
Molecular
Optical and Plasma Physics
Oscillations
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Quantum wells
Solid State Physics
Spintronics
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Summary:Magneto-intersubband oscillations (MISOs) in single quantum wells of the gapless semiconductor HgTe have been studied experimentally. It has been shown that, in contrast to MISOs in double quantum wells based on broadband semiconductors GaAs and InGaAs and theoretical predictions, magnetic fields at which antinodes of high-frequency oscillations are observed coincide with minima rather than with maxima of MISOs of the magnetoresistance ρ xx . It has been assumed that this feature is due to the suppression of the resonance of the probability of transitions between Landau levels of two spectral branches split by the strong spin—orbit coupling.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364019160082