Induced dielectric behavior in high dense AlxLa1-xTiO3 (x = 0.2–0.8) nanospheres

• Published in: Journal of materials science. Materials in electronics 2019-11, Vol.30 (22), p.20253-20264
• Main Authors: Dastagiri, S., Lakshmaiah, M. V., Chandra Babu Naidu, K., Suresh Kumar, N., Khan, Anish
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectrics; Diffraction patterns; Electrical conduction; Frequency variation; Materials Science; Nanospheres; Optical and Electronic Materials; Space charge; Spectrum analysis; Unit cell
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-019-02409-3

The present work focussed on the preparation and characterization of Al x La 1−x TiO 3 (x = 0.2–0.8) (ALTO) nanospheres. The phase purity and tetragonal structure was confirmed using the X-ray diffraction patterns. In addition, the dimensions of the ALTO unit cell were decreased with increase of Al-content. The morphological investigations evidenced the formation of spherical grains and particles of nano size. The UV–Visible spectra revealed the increasing trend of band gap (E g ) from 3.341 to 3.378 eV as a function ‘x’. Besides, the frequency, and compositional variation of dielectric parameters was described. Subsequently, the space charge polarization, and electrical conduction mechanisms were well understood using the complex dielectric modulus, and impedance spectroscopy. The Cole–Cole plots ensured that the ALTO materials exhibited the semiconducting nature due to the formation of complete semicircular arcs. Moreover, the non-Debye type relaxations were noticed in Cole–Cole plots.