Ultra-low switching current density in all-amorphous W-Hf / CoFeB / TaOx films

We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W\(_{66}\)Hf\(_{34}\)/CoFeB/TaO\(_\text{x}\) with perpendicular magnetic anisotropy and large spin Hall angle. Investigations of magnetization switching as a function of i...

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Bibliographic Details
Published in:arXiv.org 2020-08
Main Authors: Fritz, Katharina, Neumann, Lukas, Meinert, Markus
Format: Article
Language:English
Subjects:
Critical current density
Current injection
Domain walls
Magnetic anisotropy
Magnetic switching
Magnetization
Pulse duration
Online Access:Get full text
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Summary:We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W\(_{66}\)Hf\(_{34}\)/CoFeB/TaO\(_\text{x}\) with perpendicular magnetic anisotropy and large spin Hall angle. Investigations of magnetization switching as a function of in-plane assist field and current pulse-width yield switching current densities as low as \(3\times 10^{9}\) A/m\(^2\). We accredit this low switching current density to a low depinning current density, which was obtained from measurements of domain wall displacements upon current injection. This correlation is verified by investigations of a Ta/CoFeB/MgO/Ta reference sample, which showed critical current densities of at least one order of magnitude larger, respectively.
ISSN:2331-8422
DOI:10.48550/arxiv.1910.13837