Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors

The Negative Capacitance Field Effect Transistors exhibit excellent SS and DIBL improvements from the control MOSFET devices at very short gate lengths, a phenomenon which cannot be explained using conventional MOSFET theory. This benefit arises from an effect which acts similarly to decreasing the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2019-11, Vol.40 (11), p.1860-1863
Main Authors: Liao, Yu-Hung, Kwon, Daewoong, Lin, Yen-Kai, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Format: Article
Language:English
Subjects:
Capacitance
ferroelectric
Ferroelectric materials
Ferroelectricity
Field effect transistors
Iron
Logic gates
MOSFET
MOSFETs
Negative capacitance
Scaling
Semiconductor devices
short channel effects
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Negative Capacitance Field Effect Transistors exhibit excellent SS and DIBL improvements from the control MOSFET devices at very short gate lengths, a phenomenon which cannot be explained using conventional MOSFET theory. This benefit arises from an effect which acts similarly to decreasing the equivalent-oxide thickness at short gate lengths. The effect is observed in both TCAD simulations and experiments, and is explained by the conjunction of the source/drain inner fringing field and the nonlinear polarizability of ferroelectric materials. The results present a sharp contrast to conventional scaling theory and bode well for extending the MOSFET gate length scaling limit.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2940715