Microscopic model of stacking-fault potential and exciton wave function in GaAs

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault e...

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Bibliographic Details
Published in:arXiv.org 2019-11
Main Authors: Durnev, Mikhail V, Glazov, Mikhail M, Linpeng, Xiayu, Viitaniemi, Maria L K, Matthews, Bethany, Spurgeon, Steven R, Sushko, P V, Wieck, Andreas D, Ludwig, Arne, Fu, Kai-Mei C
Format: Article
Language:English
Subjects:
Crystal defects
Diamagnetism
Dipole moments
Excitons
Gallium arsenide
Photoluminescence
Stacking faults
Two dimensional models
Wave functions
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Summary:Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
ISSN:2331-8422
DOI:10.48550/arxiv.1911.00342