Capacitive Silicon Modulator Design With V-Shaped SiO[Formula Omitted] Gate Waveguide to Optimize [Formula Omitted] and Bandwidth Trade-Off

This work presents a capacitive modulator design and modeling of a new waveguide architecture using silicon and poly-si technologies. We use a methodology involving the entire lumped-type modulator design process, from the optical design to the small-signal RF analysis. By means of geometric and phy...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2020-01, Vol.26 (2), p.1
Main Authors: Dourado, Diego M, de Farias, Giovanni B, Bustamante, Yesica R R, de L Rocha, Monica, Carmo, J P
Format: Article
Language:English
Subjects:
Optical design
Physical properties
Signal processing
Silicon
Tradeoffs
Online Access:Get full text
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Summary:This work presents a capacitive modulator design and modeling of a new waveguide architecture using silicon and poly-si technologies. We use a methodology involving the entire lumped-type modulator design process, from the optical design to the small-signal RF analysis. By means of geometric and physical parameters adjustments, the trade-offs among several figures of merit are analyzed in this paper. Due to the waveguide configuration, it is shown that the modulator can improve the trade-off between [Formula Omitted] and bandwidth compared to the state-of-the-art for this kind of device. For instance, the best combinations are [Formula Omitted] 1 V @ 20.4 GHz and [Formula Omitted] = 5.7 V @ [Formula Omitted]31 GHz, with equivalent optical losses of 3 dB and 1.1 dB, respectively.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2019.2949464