Evolution of symmetry forbidden and silent Raman modes of cadmium doped zinc oxide films activated by swift heavy ion irradiation

Origin of evolution of Raman modes from cadmium doped zinc oxide thin films is reported under swift heavy ion irradiation by performing the systematic micro-Raman investigations at various ion fluences and energy deposited into the lattices. Films were also well characterized for their structural an...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2019-10, Vol.570, p.13-18
Main Authors: Gautam, Naina, Gupta, Himanshi, Kapoor, A., Singh, Fouran
Format: Article
Language:English
Subjects:
Cadmium
Cadmium doped zinc oxide
Evolution
Heavy ions
Ion irradiation
Ions
Lattice theory
Lattices
Microstructure
Morphology
Optoelectronic devices
Oxide coatings
Oxygen ions
Phonon localization
Raman spectra
Silent and forbidden Raman modes
Swift heavy ions
Symmetry
Thin films
Zinc oxide
Zinc oxides
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Summary:Origin of evolution of Raman modes from cadmium doped zinc oxide thin films is reported under swift heavy ion irradiation by performing the systematic micro-Raman investigations at various ion fluences and energy deposited into the lattices. Films were also well characterized for their structural and morphological properties. It is reported that Raman spectra of silver irradiated films show that the E2(high) peak intensity reduces with peak broadening upon increase in ion fluences, but not completely disappeared like in case of undoped zinc oxide films. Evolution of intense A1(LO) peak was also observed along with significant softening and understood by phonon localization due to high density of defects induced by irradiation. On the other hand irradiation by oxygen ions induces relatively strong A1(TO) and B1(low) modes including the non-appearance of A1(LO) mode, which were supposed to be symmetry forbidden in back-scattering and silent modes, respectively. Thus, present study provides better experimental insights about the Raman modes for their possible implications in optoelectronic devices. •Evolution of symmetry forbidden by swift heavy ion irradiation.•Activation of silent Raman modes by swift heavy ion irradiation.•Phonon localization due to high density of defects induced by irradiation.•Better experimental insights about the Raman modes for their possible applications.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2019.05.043