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Nitrogen-doped graphene quantum dots decorated ZnxCd1-xS semiconductor with tunable photoelectric properties
In this study, ZnxCd1-xS/N-GQDs composites with different Zn/Cd ratios were synthesized via a facile solvothermal process. A series of techniques were introduced to investigate the effect of Zn/Cd ratios and N-GQDs on the performances of ZnxCd1-xS/N-GQDs. The results show that the crystal structure...
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Published in: | Journal of alloys and compounds 2020-01, Vol.812, p.152096, Article 152096 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this study, ZnxCd1-xS/N-GQDs composites with different Zn/Cd ratios were synthesized via a facile solvothermal process. A series of techniques were introduced to investigate the effect of Zn/Cd ratios and N-GQDs on the performances of ZnxCd1-xS/N-GQDs. The results show that the crystal structure and photoelectric performance of the composites can be tuned via adjusting the Zn/Cd ratios. ZnxCd1-xS/N-GQDs composites transform from a hexagonal structure to a cubic structure with the increase of Zn content, and the diffraction peaks are located between hexagonal phase CdS and cubic phase ZnS. Meanwhile, the photocurrent responses and electrochemical impedance present good tunability via adjusting the Zn/Cd ratios. Zn0.9Cd0.1S/N-GQDs composites with the higher photocurrent value of 3.79 μA cm−2 and lower interfacial impedance are superior to ZnxCd1-xS/N-GQDs composites with other Zn/Cd ratios. Moreover, the introduction of N-GQDs obviously enhances the photoelectric properties of the semiconductor.
•We successfully synthesized ZnxCd1-xS/N-GQDs composites by facile solvothermal process.•ZnxCd1-xS/N-GQDs composites exhibit alloyed ZnxCd1-xS structure instead of the independent ZnS and CdS.•The photoelectric properties of ZnxCd1-xS/N-GQDs present a good tunability via adjusting the Zn/Cd ratios.•The introduction of N-GQDs enhanced the photoelectric properties of Zn0.9Cd0.1S with the higher photocurrent intensity. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2019.152096 |