Highly Sensitive Detection of Influenza A (H1N1) Virus With Silicon Nanonet BioFETs

Highly sensitive silicon-nanonet biologically active field-effect transistors (BioFETs) for the detection of influenza A (H1N1) virus have been demonstrated using a top-down process. The BioFETs show excellent intrinsic electrical characteristics, such as a low threshold voltage of 0.7 V and high on...

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Bibliographic Details
Published in:IEEE sensors journal 2019-12, Vol.19 (23), p.10985-10990
Main Authors: Park, Chanoh, Choi, Wonyoung, Kim, Donghoon, Jin, Bo, Lee, Jeong-Soo
Format: Article
Language:English
Subjects:
BioFET
Biological effects
biosensor
Biosensors
Field effect transistors
H1N1
Influenza
influenza A
Logic gates
Nanobioscience
Nanonet
Room temperature
Semiconductor devices
Sensitivity
Sensors
Silicon
Surface treatment
Swine flu
Threshold voltage
Viruses
Viruses (medical)
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Summary:Highly sensitive silicon-nanonet biologically active field-effect transistors (BioFETs) for the detection of influenza A (H1N1) virus have been demonstrated using a top-down process. The BioFETs show excellent intrinsic electrical characteristics, such as a low threshold voltage of 0.7 V and high on/off current ratio of ~10 7 . The sensing characteristics were measured at room temperature with various concentrations of H1N1 virus in a range of 10 pg/ml - 100 ng/ml. The current-related sensitivity ( {S}_{ {I}} ) shows a higher value in the subthreshold regime, where {S}_{ {I}} is strongly correlated with the subthreshold swing ( SS ). The voltage-related sensitivity ( {S}_{ {V}} ) shows almost constant behavior from the subthreshold regime to the linear regime. The limit of detection (LOD) was 10 pg/ml, which is 6 times lower than values previously reported for FET-type sensors. In addition, the nanonet sensors exhibit high specificity to influenza A virus with negligible false positive for influenza B virus.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2019.2936216