Exploration of organic additives-assisted vanadium pentoxide (V2O5) nanoparticles for Cu/n-V2O5/p-Si Schottky diode applications

The organic additives-assisted vanadium pentoxide (OA:V 2 O 5 ) nanoparticles (NPs) were prepared by a facile co-precipitation method and their structural, optical, and electrical properties have been analyzed. The orthorhombic crystal structure was observed in the X-ray diffraction pattern of pure...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2019-12, Vol.30 (24), p.20989-20996
Main Authors: Arun Paul, C., Sharanya Shree, B., Preethi, T., Chandrasekaran, J., Mohanraj, K., Senthil, K.
Format: Article
Language:English
Subjects:
Additives
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Crystallites
Diffraction patterns
Direct current
Electrical properties
Electrical resistivity
Interfacial properties
Materials Science
Morphology
Nanoparticles
Optical and Electronic Materials
Optical measurement
Optical properties
Schottky diodes
Silicon
Vanadium pentoxide
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Summary:The organic additives-assisted vanadium pentoxide (OA:V 2 O 5 ) nanoparticles (NPs) were prepared by a facile co-precipitation method and their structural, optical, and electrical properties have been analyzed. The orthorhombic crystal structure was observed in the X-ray diffraction pattern of pure vanadium pentoxide (V 2 O 5 ) NPs. The XRD patterns of OA: V 2 O 5 NPs reveals that the crystallite size of the V 2 O 5 NPs reduced without any change in the crystal structure. The SEM images showed that organic additives strongly influence on the surface morphology of the V 2 O 5 NPs. The TEM analysis revealed that the acid-treated V 2 O 5 NPs are relatively smaller in size compared to without acid-treated V 2 O 5 NPs. From the optical measurements, an increase in optical band gap was observed for OA:V 2 O 5 NPs. The dc electrical analysis revealed that the increased dc electrical conductivity is due to the incorporation of various organic additives (OA) in the V 2 O 5 NPs. The electrical parameters such as ideality factor ( n ), barrier height ( Ф B ), series resistance ( R s ), and interface properties have been analyzed for the Cu/n-V 2 O 5 /p-Si Schottky diodes (SBDs) by the J–V, Cheung’s and Norde method. The barrier height value is increased for Cu/OA:V 2 O 5 /p-Si SBDs.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-02467-7