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Indication of above-room temperature magnetoelectricity in CoFe2O4/Cr2O3 nanocomposite

•CoFe2O4/Cr2O3 nanocomposite is studied for the possession of magnetoelectricity.•Magnetoelectricity is observed up to 340 K i.e., above TN of Cr2O3.•Weak room temperature ferromagnetism is observed for the nanocomposite.•Impedance and modulus analysis of the nanocomposite reveal single relaxation m...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2020-02, Vol.495, p.165880, Article 165880
Main Authors: Barik, A., Sahoo, M.R., Kuila, S., Tiwary, Sweta, Vishwakarma, P.N.
Format: Article
Language:English
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Summary:•CoFe2O4/Cr2O3 nanocomposite is studied for the possession of magnetoelectricity.•Magnetoelectricity is observed up to 340 K i.e., above TN of Cr2O3.•Weak room temperature ferromagnetism is observed for the nanocomposite.•Impedance and modulus analysis of the nanocomposite reveal single relaxation mechanism. Cobalt ferrite [CoFe2O4 (CFO)]/chromium oxide [Cr2O3 (CR)] nanocomposite is prepared by following the sol-gel autocombustion method in order to study its magnetoelectric (ME) properties. The presence of both the CFO (cubic) and CR (rhombohedral) phases is confirmed from the Rietveld refinement results of X-ray diffraction (XRD) patterns. Field emission scanning electron micrograph (FESEM) display the homogeneous distribution of particles with the average particle sizes of ~50–300 nm. A small opening of hysteresis in the magnetization (M)-magnetic field (H) plot signifies the existence of weak ferromagnetism in the sample. The frequency dependence of impedance responses subjected to applied magnetic fields are well described by impedance based Havriliak-Negami expression and revealed the presence of single relaxation which is attributed to the grains response. The involvement of p-type polaronic relaxation is confirmed from the obtained value of activation energy ≈0.39 eV. More interestingly, the direct magnetoelectric measurement shows the existence of linear magnetoelectricity up to 340 K and therefore provide applications in various ME-based devices.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.165880