Prospect of silver nanowire (AgNW) in development of simple and cost-effective vertical organic light-emitting transistors

Despite a great potential for low-voltage display applications, vertical organic light-emitting transistors (VOLETs) suffer serious issues of high-cost and complex fabrication techniques, notably for the intermediate electrode. To address this problem, this study demonstrates a cost-effective and si...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2019-12, Vol.125 (12), p.1-6, Article 871
Main Authors: Mohd Sarjidan, M. A., Abd. Majid, W. H.
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Coated electrodes
Condensed Matter Physics
Diodes
Electrical resistivity
Electrodes
Machines
Manufacturing
Materials science
Nanotechnology
Nanowires
Optical and Electronic Materials
Physics
Physics and Astronomy
Porosity
Processes
Semiconductor devices
Spin coating
Surfaces and Interfaces
Thin Films
Transistors
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Summary:Despite a great potential for low-voltage display applications, vertical organic light-emitting transistors (VOLETs) suffer serious issues of high-cost and complex fabrication techniques, notably for the intermediate electrode. To address this problem, this study demonstrates a cost-effective and simple approach to fabricate a VOLET device by utilising spin-coated silver nanowires (AgNWs) as an intermediate electrode. AgNWs exhibit high electrical conductivity, high porosity and high optical transparency, which qualify them as a perfect candidate for the intermediate electrode in VOLETs. To show the potential of AgNWs in VOLET devices using a facile, cost-effective spin-coated method, two types of VOLETs, namely, the Schottky barrier (SB) VOLET and static induction transistor (SIT) VOLET, were fabricated and analysed. Interestingly, both the devices show transistor behaviour when the V g is varied, implying a fully functional VOLET device. We believe that this is one of the simplest methods to fabricate VOLETs without compromising the device characteristics demonstrated to date.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-019-3162-z