Effect of atomic replacement on the magnetic anisotropy in epitaxially grown ferrite thin films

•Epitaxial NFO and MFO thin films are fabricated using the PLD technique.•MFO(50 nm) thin film exhibits the uniaxial magnetic anisotropy.•Anisotropy is induced by replacing magnetoelastic ions with non-magneto-elastic ions.•MFO can be a potential candidate for energy efficient based spintronic devic...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2020-02, Vol.496, p.165956, Article 165956
Main Authors: Ade, Ramesh, Chen, Y.S., Lin, J.G.
Format: Article
Language:English
Subjects:
Anisotropy
Dependence
Elastic anisotropy
Electronic devices
Epitaxial growth
Epitaxial thin films
Ferrites
Ferromagnetic materials
Ferromagnetic resonance
Induced magnetic anisotropy
Magnetic anisotropy
Magnetic fields
Nickel ferrites
Pulsed laser deposition
Pulsed lasers
Spintronics
Substrates
Thin films
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Summary:•Epitaxial NFO and MFO thin films are fabricated using the PLD technique.•MFO(50 nm) thin film exhibits the uniaxial magnetic anisotropy.•Anisotropy is induced by replacing magnetoelastic ions with non-magneto-elastic ions.•MFO can be a potential candidate for energy efficient based spintronic devices. In the present work, NiFe2O4 (NFO) and MgFe2O4 (MFO) thin films are deposited on MgAl2O4 (MAO)(1 0 0) substrate using pulsed laser deposition technique to investigate the atomic replacement effects on the magnetic anisotropy of the films. X-ray diffraction analysis confirms the c-oriented growth of the films. Magnetic field dependent magnetization discloses the soft magnetic nature, lower saturation magnetic field and large magnetic anisotropy in MFO(25 and 50 nm) films as compared to NFO(27 and 47 nm). In particular, MFO(50 nm) film exhibits a symmetrical ferromagnetic resonance spectrum in contrast to the bulk counterpart. The angular dependence of the resonance field reveals the uniaxial magnetic anisotropy in MFO(50 nm) film, making it one of the potential candidates for energy-efficient information and communication based spintronic devices. An induced magnetic anisotropy in MFO may be ascribed to the magneto-elastic Ni2+ ions replacement with non-magneto-elastic Mg2+ ions.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.165956