Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology

For high-volume manufacturing of 2-D transistors, area-selective chemical reaction deposition (CVD) growth is able to provide good-quality 2-D layers and may be more effective than exfoliation from bulk crystals or wet/dry transfer of large-area as-grown 2-D layers. We have successfully grown contin...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-12, Vol.66 (12), p.5381-5386
Main Authors: Chung, Yun-Yan, Shieh, Jia-Min, Su, Sheng-Kai, Chiang, Hung-Li, Chen, Tzu-Chiang, Li, Lain-Jong, Wong, H.-S. Philip, Jian, Wen-Bin, Chien, Chao-Hsin, Lu, Kuan-Cheng, Cheng, Chao-Ching, Li, Ming-Yang, Lin, Chao-Ting, Li, Chi-Feng, Chen, Jyun-Hong, Lai, Tung-Yen, Li, Kai-Shin
Format: Article
Language:eng ; jpn
Subjects:
Area selective chemical reaction deposition (CVD)
Chemical reactions
Chemical vapor deposition
Image transmission
Logic gates
MOSFETs
Organic chemistry
p-MOSFET
Performance evaluation
short channel device
Silicon
Silicon substrates
Substrates
Sulfur
Transistors
Tungsten
Tungsten disulfide
WS
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Summary:For high-volume manufacturing of 2-D transistors, area-selective chemical reaction deposition (CVD) growth is able to provide good-quality 2-D layers and may be more effective than exfoliation from bulk crystals or wet/dry transfer of large-area as-grown 2-D layers. We have successfully grown continuous and uniform WS 2 film comprising around seven layers by area-selective CVD approach using patterned tungsten source/drain metals as the seeds. The growth mechanism is inferred and supported by the transmission electron microscope (TEM) images, as well. The first top-gate MOSFETs of CVD-WS 2 channels on SiO x /Si substrates are demonstrated to have good short channel electrical characteristics: ON-/OFF-ratio of 10 6 , a subthreshold swing of 97 mV/decade, and nearly zero drain-induced barrier lowering (DIBL).
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2946101