Influence of structural changes on electrical properties of Al:ZnO films

•ZnO and Al-Doped ZnO were prepared by sol-gel method and coated via dip-coating technique.•Al represents an important role for increased the morphological and optoelectronic properties of the ZnO.•The resistivity of the thin films was decreased by doped Al.•According to the UV–Vis spectra, with inc...

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Bibliographic Details
Published in:Materials letters 2020-01, Vol.258, p.126641, Article 126641
Main Authors: Urper, Osman, Baydogan, Nilgun
Format: Article
Language:English
Subjects:
Dip coatings
Electrical properties
Immersion coating
Materials science
Optical properties
Optoelectronic
Room temperature
Sol-gel
Sol-gel processes
Structural characterization
Thin films
Zinc oxide
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Summary:•ZnO and Al-Doped ZnO were prepared by sol-gel method and coated via dip-coating technique.•Al represents an important role for increased the morphological and optoelectronic properties of the ZnO.•The resistivity of the thin films was decreased by doped Al.•According to the UV–Vis spectra, with increasing Al content, the thin films transmittance increased from 80% to 85%.•Lower defect density of Al:ZnO film has a benefit effect on the resistivity. This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10−4 Ω.cm to 0.73–0.93 × 10−4 Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2019.126641