Combustion synthesis of single‐phase Al4SiC4 powder with assistance of induction heating

Ternary aluminum silicon carbide Al4SiC4 is a promising material not only in refractory applications, but also in electronics and photocatalysis. However, synthesis of Al4SiC4 requires high‐temperature heat treatment for several hours. In this work, we describe a new, fast and effective method to sy...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2020-02, Vol.103 (2), p.744-749
Main Authors: Gubarevich, Anna V., Watanabe, Tsubasa, Nishimura, Toshiyuki, Yoshida, Katsumi
Format: Article
Language:English
Subjects:
Al4SiC4
Aluminum
carbides
Combustion synthesis
Exothermic reactions
Heat treating
Heat treatment
Heating rate
Induction heating
powders
Propagation
Refractory materials
Silicon carbide
Temperature profiles
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Summary:Ternary aluminum silicon carbide Al4SiC4 is a promising material not only in refractory applications, but also in electronics and photocatalysis. However, synthesis of Al4SiC4 requires high‐temperature heat treatment for several hours. In this work, we describe a new, fast and effective method to synthesize single‐phase Al4SiC4 powder. Our method is based on combustion synthesis reaction of Al, Si and C initiated under high‐frequency induction heating. Heating program was optimized to prevent separation of melted aluminum and provide uniform initiation, propagation and completion of the reaction. As a result, pure‐phase Al4SiC4 powder was synthesized in few minutes. Temperature profile of a sample measured during heating process showed appearance of two exothermic peaks, thus confirming propagation of a two‐step combustion reaction. Induction heating provided capability to finely and readily control external heating rate, which is considered to be one of the key factors to reach high‐purity Al4SiC4.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.16846