InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

• Published in: Technical physics letters 2019-11, Vol.45 (11), p.1092-1096
• Main Authors: Maleev, N. A., Vasil’ev, A. P., Kuzmenkov, A. G., Bobrov, M. A., Kulagina, M. M., Troshkov, S. I., Maleev, S. N., Belyakov, V. A., Petryakova, E. V., Kudryashova, Yu. P., Fefelova, E. L., Makartsev, I. V., Blokhin, S. A., Ahmedov, F. A., Egorov, A. V., Fefelov, A. G., Ustinov, V. M.
• Format: Article
• Language: English
• Subjects: Breakdown; Classical and Continuum Physics; Electric potential; Heterostructures; High electron mobility transistors; Indium aluminum arsenides; Indium gallium arsenides; Indium phosphides; Integrated circuits; Millimeter waves; Physics; Physics and Astronomy; Power amplifiers; Semiconductor devices; Transconductance; Transistors; Voltage
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785019110075

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of  810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.