Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

• Published in: Microelectronic engineering 2020-02, Vol.220, p.111182, Article 111182
• Main Authors: Santana, L.A., Reséndiz, L.M., Díaz, A.I., Hernandez-Cuevas, F.J., Aleman, M., Hernandez-Como, N.
• Format: Article
• Language: English
• Subjects: Cathode sputtering; Current voltage characteristics; Diodes; Electric contacts; Electron beams; Gallium; Glass substrates; IGZO; Indium gallium zinc oxide; Indium tin oxides; Metal oxides; N-type semiconductors; Photolithography; Schottky barrier diode; Schottky diodes; Silver; Silver oxide; Substrates; Thermionic emission; Zinc oxide; Zinc oxides
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2019.111182

In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2. [Display omitted] •Full lithography fabrication of Schottky barrier diodes based on AgOx/IGZO.•A diode ideality factor of 1.71 and a Schottky barrier of 1.14 eV were obtained.•A high rectification ratio of 109 was obtained.•The maximum temperature of the fabrication process was 200 °C.