Strain-driven nematicity of odd-parity superconductivity in SrxBi2Se3

In this paper, we present novel experimental evidence for the odd-parity nematic superconductivity in high-quality single crystals of doped topological insulator SrxBi2Se3. The x-ray diffraction shows that the grown single crystals are either weakly stretched or compressed uniaxially in the basal pl...

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Bibliographic Details
Published in:Physical review. B 2019-12, Vol.100 (22)
Main Authors: Kuntsevich, A Yu, Bryzgalov, M A, Akzyanov, R S, Martovitskii, V P, Rakhmanov, A L, Selivanov, Yu G
Format: Article
Language:English
Subjects:
Basal plane
Crystal growth
Magnetic fields
Magnetoresistance
Magnetoresistivity
Parity
Single crystals
Superconductivity
Symmetry
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Summary:In this paper, we present novel experimental evidence for the odd-parity nematic superconductivity in high-quality single crystals of doped topological insulator SrxBi2Se3. The x-ray diffraction shows that the grown single crystals are either weakly stretched or compressed uniaxially in the basal plane along one of the crystal axis. We show that in the superconducting state, the upper critical magnetic field Hc2 has a twofold rotational symmetry and depends on the sign of the strain: in the stretched samples the maximum of Hc2 is achieved when the in-basal-plane magnetic field is transverse to the strain axis, while in the compressed samples this maximum is observed when the field is along the strain direction. This result is naturally explained within a framework of the odd-parity nematic superconductivity coupled to the strain. Magnetoresistance in the normal state is independent of the current direction and also has a twofold rotational symmetry that demonstrates the nematicity of the electronic system in the normal state.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.100.224509