Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

We report on low temperature carrier transport property of quantum dot (QD) devices based on hexagonal boron nitride-encapsulated tetralayer graphene heterostructures. In the device with single dot geometry, we demonstrate a stochastic Coulomb blockade, suggesting formation of multiple dots coupled...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-02, Vol.59 (2), p.24001
Main Authors: Iwasaki, Takuya, Kato, Taku, Ito, Hirohito, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka, Hatano, Tsuyoshi, Moriyama, Satoshi
Format: Article
Language:English
Subjects:
Boron nitride
Carrier transport
Diamonds
Electron transport
Electrons
Graphene
Heterostructures
Interlayers
Low temperature
Quantum dots
Single electrons
Transport properties
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on low temperature carrier transport property of quantum dot (QD) devices based on hexagonal boron nitride-encapsulated tetralayer graphene heterostructures. In the device with single dot geometry, we demonstrate a stochastic Coulomb blockade, suggesting formation of multiple dots coupled each other in series/parallel. Under a perpendicular magnetic field, the overlapping Coulomb diamonds are lifted at zero bias voltage and the charging energy is decreased. These imply the suppression of multiple dots behavior. Our results pave a way toward the investigation of interlayer correlation on single electron transport in few-layer graphene QDs.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab65a8