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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

Composites consisting of Ge nanoclusters embedded in GeO 2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO 2 {Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (16), p.2064-2067
Main Authors: Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A., Latyshev, A. V.
Format: Article
Language:English
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Summary:Composites consisting of Ge nanoclusters embedded in GeO 2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO 2 {Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO 2 {Ge-NCs} heterolayers. When removal the GeO 2 matrix from a thick GeO 2 {Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619120030