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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Composites consisting of Ge nanoclusters embedded in GeO 2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO 2 {Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (16), p.2064-2067 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Composites consisting of Ge nanoclusters embedded in GeO
2
matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO
2
{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO
2
{Ge-NCs} heterolayers. When removal the GeO
2
matrix from a thick GeO
2
{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782619120030 |