Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of t...

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Bibliographic Details
Published in:arXiv.org 2020-01
Main Authors: Lv, Quanshan, Faguang Yan, Mori, Nobuya, Zhu, Wenkai, Hu, Ce, Kudrynskyi, Zakhar R, Kovalyuk, Zakhar D, Patanè, Amalia, Wang, Kaiyou
Format: Article
Language:English
Subjects:
Brillouin zones
Computer architecture
Current carriers
Electrical junctions
Field effect transistors
Heterojunctions
Indium selenides
Interlayers
Semiconductor devices
Thickness
Thin films
Transistors
Transport properties
Two dimensional materials
Valence band
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Summary:Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. Here, we demonstrate TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics: forward rectifying, Zener-tunneling and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ~ 0.2V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.
ISSN:2331-8422