Facile deposition and study of substrate temperature effect on the structural and physical properties of Cu2FeSnS4 (CFTS) thin films

• Published in: Journal of materials science. Materials in electronics 2020-02, Vol.31 (3), p.2398-2405
• Main Authors: Ghiyasi, F., Fadavieslam, M. R., Ardyanian, M.
• Format: Article
• Language: English
• Subjects: Carrier density; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electrical measurement; Electrical properties; Field emission microscopy; Field emission spectroscopy; Materials Science; Morphology; Optical and Electronic Materials; Optical properties; Physical properties; Seebeck effect; Spectrum analysis; Spray pyrolysis; Substrates; Temperature effects; Thin films; X-ray diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-019-02775-y

Chalcogenide thin films of Cu 2 FeSnS 4 (CFTS) were deposited through spray pyrolysis method, and effect of substrate temperature on the structure, morphology, optical, and electrical properties of the thin films was investigated. The samples were characterized by X-ray diffraction (XRD), UV–Vis spectroscopy, field emission scanning electron microscopy, and electrical measurements. XRD results describe the existence of the stannite phase of CFTS thin films, which is modified after increasing the substrate temperature. All polycrystalline thin films show peaks related to (112), (204), and (116) planes. FESEM images represent growth of the grains for higher substrate temperatures. Hall and Seebeck effect experiments confirm p-type conduction in all of the samples. The carrier density is found in the order of magnitude of 10 20  cm −3 which increases by increasing the substrate temperature. Optical band gap measurements based on UV–Vis spectroscopy describe the values between 1.33 and 1.54 eV for all the samples. It is found that the CFTS absorber layers can be fabricated via facile method and their physical properties are adjustable through regulation of substrate temperature.